Seme BSV64 Datasheet
Prelim.12/99
BSV64
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
SILICON NPN
PLANAR TRANSIST OR
V
CBO
Collector – Base Voltage (open emitter)
V
CER
Collector – Emitter Voltage (R
BE
£50W
)
V
CEO
Collector – Emitter Voltage (open base)
V
EBO
Emitter – Base Voltage (open collector)
I
C
Collector Current (d.c.)
I
CM
Collector Current (peak value)
I
B
Base Current (d.c.)
P
TOT
Total Device Dissipation @ TC= 50°C
T
stg,
Storage Temperature
T
j
Junction Temperature
R
thj-c
Thermal Resistance Junction to Case
100V
80V
60V
5V
2A
5A
1A
5W
–55 to 175°C
175°C / W
25°C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
Pin 1 = Emitter
Underside View
Pin 2 = Base Pin 3 = Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
123
DESCRIPTION
General Purpose NPN Transistor in a
Hermetic TO39 Package
FEATURES
• V
CBO
= 100V
• V
CEO
= 60V
• I
C
= 2A
Parameter Test Conditions Min. Typ. Max. Unit
Prelim.12/99
BSV64
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
I
C
= 5A IB= 5A
IC= 5A IB= 5A
VCB= 60V IE= 0
VEB= 4V IC= 0
VCE= - 5V IC= 2A
IE= I
e
=0V
CB
=10V
IC= 0.5A VCE=5V
I
Con
= 5A; I
Bon
= -I
Boff
= 0.5A
-V
BEoff
= 2V
V
CEsat
Collector – Base Saturation Voltage
V
BEsat
Emitter – Base Saturation Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
c
c
Collector Capacitance at f = 1MHz
f
T
Transistion Frequency at f = 35MHz
ton Turn on Time
toff Turn off time
1
1.8
10
10
40
80
100
0.6
1.2
V
m
A
—
pF
MHz
m
s
Loading...