Seme BFY90 Datasheet

DESCRIPTION

The BFY90 is a low noise transistor intended for
use in broad and narrow-band amplifiers up to
1GHz.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise stated)

BFY90

Prelim. 12/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

V

CBO

Collector – Base Voltage

V

CER

Collector – Emitter Voltage (R

BE

£50W

)

V

CEO

Collector – Emitter Voltage

V

EBO

Emitter – Base Voltage

I

C(AV)

Average Collector Current

I

CM

Peak Collector Current (f³1MHz)

P

tot

Power Dissipation at T

amb

=

25°C

T

j

Storage Temperature

T

stg,

Junction Temperature

30V
30V
15V

2.5v
25mA
50mA

200mW°C

200°C

–65 to +200°C

MECHANICAL DATA

Dimensions in mm (inches)

0.48 (0.019)

0.41 (0.016)
dia.

4.95 (0.195)

4.52 (0.178)

4.95 (0.195)

4.52 (0.178)

5.33 (0.210)

4.32 (0.170)

12.7 (0.500)

min.

1

2

3

4

2.54 (0.100)
Nom.

TO72

Pin 1 – Emitter
Pin 2 –Base

Pin 3 – Collector
Pin 4 – Connected to Case

Parameter Test Conditions Min. Typ. Max. Unit

nA

V

—

GHz

pF

pF

dB

dB

mW

10
15
30

0.75
25 150
20 125

1

1.3

1.5

0.8

4

3.5

5

5

21

10

BFY90

Prelim. 12/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

I

CBO

V

(BR)CEO*

V

(BR)CER*

V

CEK

h

21E

f

T

C

22b(1)

C

12e(2)

NF

G

p

P

O(2)

Collector Cut Off Current
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Emitter Knee Voltage
Static Forward Current Transfer
Ratio

Transition Frequency

Output Capacitance
Open-Circuit Reverse Transfer

Capacitance

Noise Figure

Power Gain

Output Power

V

CB

= 15V IE= 0
IC= 10mA IB= 0
IC= 10mA R

BE

£50W

IC= 10mA
VCE= 1V IC= 2mA
VCE= 1V IC= 25mA

VCE= 5V IC= 2mA
f = 500MHz
VCE= 5V IC= 25mA
f = 500MHz
VCB= 10V IE= 0.
f = 1MHz
VCE= 5V IC= 0
f = 1MHz
VCE= 5V IC= 2mA
f = 100kHz R

G optimum

VCE= 5V IC= 2mA
f = 200MHz R

G optimum

VCE= 5V IC= 2mA
f = 500MHz RG = 50

W

VCE= 5V IC= 2mA
f = 800MHz R

G optimum

VCE= 10V IC= 14mA
f = 200MHz
VCE= 10V IC= 14mA
f1= 202MHz f2= 205MHz
Output SWR £2
TOS sortie £2
dIM* = - 30dB at 2 f2- f1=
208MHz

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

* Pulse test tp= 300ms ,

d £

2%

(1) Shield Lead (case) not connected (2) Shield Lead (case) grounded
* Intermodulation Distortion

R

th(j-a)

R

th(j-c)

£

0.875 Max

£

0.575 Max

Junction-ambient thermal resistance
Junction-case thermal resistance

°C/W
°C/W

THERMAL DATA

DYNAMIC CHARACTERISTICS