Seme BFY84 Datasheet
DESCRIPTION
The BFY84 is a six terminal device containing
two isolated silicon planar epitaxial NPN
transistors in Jedec TO77 metal case.
The good thermal tracking over a wide current
and temperature range, offers the circuit
designer matched transistors with specified
performance for differential amplifiers.
ABSOLUTE MAXIMUM RATINGS
BFY84
Prelim. 5/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
V
CBO
Collector – Base Voltage (IE= 0)
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IC= 0)
I
C
Collector Current
P
tot
Total Dissipation at T
amb
£
25°C (one side)
T
amb
£
25°C (both sides)
T
case
£
25°C (one side)
T
case
£
25°C (both sides)
T
case
£
100°C (one side)
T
case
£
100°C (both sides)
T
stg,Tj
Storage and Junction Temperature
30V
12V
3V
200mA
0.3W
0.38W
0.6W
0.98W
0.34W
0.56W
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
1.02
(0.040)
Max.
12.7 (0.500)
Min.
6.10 (0.240)
6.60 (0.260)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100)
0.74 (0.029)
1.14 (0.045)
1
6
4
3
2
45˚
0.71 (0.028)
0.86 (0.034)
0.41 (0.016)
0.53 (0.021)
5
TO77
Pin 1 – Collector 1
Pin 2 – Base 1
Pin 3 – Emitter 1
Pin 4 – Emitter 2
Pin 5 – Base 2
Pin 6 – Collector 2
Parameter Test Conditions Min. Typ. Max. Unit
nA
m
A
V
V
V
V
V
mV
m
V/°C
—
MHz
pF
pF
dB
R
thj-case
R
thj-amb
One side
292
583
Both Sides
178
460
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
°C/W
°C/W
10
1
30
12
3
0.4
1
15
25
20
1.25
600
2
1.7
6
BFY84
Prelim. 5/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
I
CBO
V
(BR)CBO
V
CEO(sus)*
V
(BR)EBO
V
CE(sat)
V
BE(sat)
lV
BE1-VBE2
l
lV
BE1-VBE2
l
ÎT
h
FE
h
FE1/hFE2
f
T
C
EBO
C
CBO
NF
Collector Cut Off Current
Collector Base Breakdown Voltage
Collector Emitter Sustaining Voltage
Emitter Base Breakdown Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Input Offset Voltage
Input Offset Voltage Temperature
Coefficient
DC Current Gain
Matched Pair Ratio
Transistion Frequency
Emitter Base Capacitance
Collector Base Capacitance
Noise Figure
V
CB
= 15V IE= 0
VCB= 15V T
amb
=150°C
IC= 1mAI
E
= 0
IC= 3mA IB= 0
IC= 0 IE= 10mA
IC= 10mA IB= 1mA
IC= 10mA IB= 1mA
IC= 3mA VCE= 1V
IC= 3mA VCE= 1V
IC= 3mA VCE= 1V
IC= 3mA VCE= 1V
IC= 4mA VCE= 10v
f = 100MHz
IC= 0 VEB= 0.5V
f = 1MHz
IE= 0 VCB= -10V
f = 1MHz
IC=1mA VCE= 6V
f = 60MHz
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
* Pulse test tp= 300ms , Duty Cycle = 1%
THERMAL DATA
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