Seme BFY50 Datasheet
Prelim.02/00
BFY50
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
MEDIUM PO WER AMPLIFIERS
NPN SILICON PLANAR
TRANSISTOR
Description
The BFY50 is a Silicon Planar Epitaxial NPN
Transistor in Jedec TO39 metal case. they
are intended for general purpose linear and
switching applications
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
I
CM
Collector Peak Current
P
TOT
Total Power Dissipation @ T
amb
£
25°C
@ T
case
£
25°C
T
stg,Tj
Storage and Operatuing Junction Temperature
R
j-case
Thermal Resistance Junction to Case
R
j-amb
Thermal Resistance Junction to Ambient
80V
35V
6V
1A
1.5A
0.8W
5W
–65 to 200°C
35°C / W
218°C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
Pin 1 = Emitter
Underside View
Pin 2 = Base Pin 3 = Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
123
Parameter Test Conditions Min. Typ. Max. Unit
Prelim.02/00
BFY50
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
I
C
= 100mAIE= 0
IC= 30mA IB= 0
IC= 100mA IE= 100mA
VCB= 60V IE= 0
TC = 100°C
VEB= 5V IC= 0
TC = 100°C
IC= 150mA IE= 15mA
IC= 1A IB= 0.1A
IC= 150mA IB= 15mA
IC= 1A IB= 0.1A
IC= 10mA VCE= 10V
IC= 150mA VCE= 10V
IC= 1mA VCE= 10V
V
(BR)CBO*
Collector – Base Breakdown Voltage
V
(BR)CEO*
Collector – Emitter Breakdown Voltage
V
(BR)EBO*
Emitter – Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
80
35
6
50
2.5
50
2.5
0.14 0.2
0.7 1
0.95 1.3
1.5 2
20 40
30 55
15 30
V
nA
m
A
nA
m
A
V
V
—
h
fe
Small Signal Current Gain
h
ie
Imput Impedance
h
rE
Reverse Voltage Ratio
hoe
Output Admittance
C
cbo
Collector -Base Capacitance
f
T
Transistion Frequency
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
V
CE
= 6V IC= 1mA f = 1kHz
VCE= 6V IC= 10mA f = 1KHz
VCE= 5V IC= 10mA f = 1.KHz
VCE= 5V IC= 10mA f = 1.KHz
V
CE
= 5V IC= 10mA f = 1.KHz
V
CB
= 5V IE= 10mA f = 1.KHz
VCE= 10V IC= 50mA
I
C
= 150mA VCC= 10V
I
B1
= 15mA VBE= -2V
IC= 150mA VCC= 10V
IB1= -IB2= 15mA
25
45
180
55 x10
.6
30
10
60 100
15
40
300
60
—
W
—
m
S
pF
MHz
ns
DYNAMIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
Pulse Duration = 300ms, Duty Cycle = 1%
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