Seme BFX29 Datasheet

BFX29

Prelim.5/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage

V

EBO

Emitter – Base Voltage

I

C

Collector Current Continuous

I

CM

Collector Current Peak

I

EM

Emitter Current Peak

P

tot

Total Power Dissipation T

amb

< 25°C

T

stg

Storage Temperature

T

j

Operating Junction Temperature

60V
60V

5V
600mA
600mA
600mA

600 mW

–65 to 200°C

200°C

MECHANICAL DATA

Dimensions in mm (inches)

PNP SILICON EPITAXIAL

TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• General Purpose Industrial Applications

TO39 PACKAGE

Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector

6.10 (0.240)

6.60 (0.260)

0.89
max.

(0.035)

12.70

(0.500)

min.

7.75 (0.305)

8.51 (0.335)
dia.

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

45°

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

5.08 (0.200)
ty p .

123

2.54

(0.100)

Parameter Test Conditions Min. Typ. Max. Unit

ELECTRICAL CHARACTERISTICS (T

j

= 25°C unless otherwise stated)

BFX29

Prelim.5/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

VEB= 5.0V IC= 0
VEB= 3V IC= 0
VCB=60V IE= 0
VCB=50V IE= 0

Tj = 100°C
VCE=10V IC= 0.1mA
VCE= 10V IC= 1mA
VCE= 10V IC= 10mA
VCE=10V IC= 50mA
VCE= 10V IC= 150mA

IC= 150mA IB= 15mA
IC= 30mA IB= 1.0mA

IC= 150mA IB= 15mA
VCB= 10V IE= Ie =0

f=1.0MHz
VEB= 2.0V IC= Ic =0

f=1.0MHz
VCE= 10V IC= 50mA
f=100MHz T

amb

= 25°C

Emitter Cut–off Current

Collector Cut–off Current

DC Current Gain

Collector – Emitter
Saturation Voltage

Base – Emitter Saturation Voltage

Collector Capactitance

Emitter Capactitance

Transistion Frequency

30 500

1.0 100

1.0 500

0.5 50

0.03 2.0

20 90

40 105
50 125
50 125
40 90

0.15 0.40

0.77 0.90

1.05 1.30
6 12

18 30

100 360

nA

nA

m

A

—

V

V

pF

MHz

I

EBO

I

CBO

h

FE

V

CE(sat)

V

BE(sat)

C

tc

C

te

f

T

THERMAL CHARACTERISTICS

R

q

th(j-amb)

Thermal Resistance Junction to Ambient 292 °C/W