Seme BDX67C, BDX67B, BDX67A, BDX67 Datasheet
BDX67
BDX67A
BDX67B
BDX67C
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NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
PNP complements are:
BDX66, BDX66A, BDX66B, BDX66C.
V
CEO
Collector - emitter voltage (open base)
V
CBO
Collector - base voltage (open emitter)
V
EBO
Emitter - base voltage (open collector)
I
C
Collector current
I
CM
Collector current (peak)
I
B
Base current
P
tot
Total power dissipation at Tmb= 25°C
T
j
Maximum junction temperature
T
stj
Storage junction temperature
R
th j-mb
Thermal resistance, junction to mounting base.
60 80 100 120 V
80 100 120 140 V
5555V
16 A
20 A
250 mA
150 W
200 °C
-65 to +200 °C
1.17 K/ W
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS (T
case
=25°C unless otherwise stated)
ìïïïïíïïïïî
TO3 Package.
Case connected to collector.
BDX BDX BDX BDX
67 67A 67B 67C
26.6 max.
4.2
BE
30.1
39.5 max.
16.9
10.9
9.0 max.
2.5
1.0
20.3 max.
12.8
mA
mA
V
pF
kHz
V
BDX67
BDX67A
BDX67B
BDX67C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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ELECTRICAL CHARACTERISTICS (T
j
= 25°C, unless otherwise stated)
I
CEO
Collector cut-off current
I
EBO
Emitter cut-off current
h
FE
D.C. current gain (note 1)
V
BE
Base - emitter voltage (note 1)
C
c
Collector capacitance
f
hfe
Cut-off frequency
h
fe
Small signal current gain
V
F
Diode, forward voltage
I
E
= 0, VCB= V
CEOmax
IE= 0, V
CB
= ½V
CBOmax
, T
j
= 200°C
IB= 0, V
CE
= ½V
CEOmax
IC= 0, VEB= 5V
IC=1A, VCE= 3V
IC= 10A, VCE= 3V
IC= 16A, VCE= 3V
IC= 10A, VCE= 3V
IE= Ie= 0, VCB= 10V f = 1MHz
IC= 5A, VCE= 3V
–I
Boff
= 0, ICC= 7.8 A
tp= 1ms,
d
< 1%
IC= 5A, VCE= 3V, f = 1MHz
IF= 10A
1
5
1
5
5200
1000
4000
2.5
300
50
20
2.5
Parameter Test Conditions Min. Typ. Max. Unit.
Note 1: Measured under pulse conditions , tp< 300ms, d< 2%
2
E
(BR)
Turn-off breakdown energy
with inductive load
V
CEsat
Collector - emitter saturation
voltage
IC= 10A, IB= 40mA
V
150 mJ
I
CBO
Collector cut-off current
mA
R1 typ. 3K
W
R2 typ. 80
W
Circuit Diagram
B
R2R1
E
C
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