Seme BDX63C, BDX63B, BDX63A, BDX63 Datasheet

BDX63
BDX63A
BDX63B
BDX63C

NPN EPITAXIAL BASE

DARLINGTON POWER

TRANSISTOR

NPN epitaxial base transistors in

monolithic Darlington circuit for

audio output stages and general

amplifier and switching

applications.

PNP complements are:

BDX62, BDX62A, BDX62B, BDX62C.

V

CEO

Collector - emitter voltage (open base)

V

CBO

Collector - base voltage (open emitter)

V

EBO

Emitter - base voltage (open collector)

I

C

Collector current

I

CM

Collector current (peak)

I

B

Base current

P

tot

Total power dissipation at T

case

= 25°C

T

j

Maximum junction temperature

T

stj

Storage junction temperature

R

th j-mb

Thermal resistance, junction to mounting base.

60 80 100 120 V
80 100 120 140 V

5555V

8A

12 A

150 mA

90 W

200 °C

-65 to 200 °C

1.94 °C / W

MECHANICAL DATA

Dimensions in mm

ABSOLUTE MAXIMUM RATINGS (T

case

=25°C unless otherwise stated)

ìïïïïíïïïïî

TO3 Package.
Case connected to collector.

BDX BDX BDX BDX

63 63A 63B 63C

Prelim. 7/93

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

26.6 max.

4.2

BE

30.1

39.5 max.

16.9

10.9

9.0 max.

2.5

1.0

20.3 max.

12.8

ELECTRICAL CHARACTERISTICS (T

j

= 25°C, unless otherwise stated)

I

CEO

Collector cut-off current

I

EBO

Emitter cut-off current

h

FE

D.C. current gain (note 1)

V

BE

Base - emitter voltage (note 1)

C

c

Collector capacitance

f

hfe

Cut-off frequency

ï

h

fe

ï

Small signal current gain

V

F

Diode, forward voltage

I

E

= 0, VCB= V

CEOmax

IE= 0, V

CB

= ½V

CBOmax

, T

j

= 200°C

IB= 0, V

CE

= ½V

CEOmax

IC= 0, VEB= 5V
IC= 0.5A, VCE= 3V
IC= 3A, VCE= 3V
IC= 8A, VCE= 3V
IC= 3A, VCE= 3V

IE= Ie= 0, VCB= 10V
IC= 3A, VCE= 3V
–I

Boff

= 0, I

Con

= 4.5 A

tp= 1ms, T = 100ms

IC= 3A, VCE= 3V, f = 1MHz
IF= 3A

0.2
2

0.5
5

2500

1000

2600

2.5

100
100

100

1.2

Parameter Test Conditions Min. Typ. Max. Unit.

mA
mA

V

pF

kHz

V

Note 1: Measured under pulse conditions , tp< 300ms, d< 2%

2

E

(BR)

Turn-off breakdown energy
with inductive load

h

FE1/hFE2

D.C. current gain ratio of
complementary matched pairs

V

CEsat

Collector - emitter saturation
voltage

IC= 3A, IB= 12mA

V

50

2.5

mJ

I

C

= 3A, VCE= 3V

I

CBO

Collector cut-off current

mA

BDX63
BDX63A
BDX63B
BDX63C

R1 typ. 8K

W

R2 typ. 100

W

Circuit diagram.

Prelim. 7/93

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk