Seme BDX14A Datasheet
- 90V
- 55V
- 60V
- 90V
-7V
-4V
-2V
29W
200°C
–65 to 200°C
6°C / W
BDX14AA
Prelim. 02/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
PNP
SILICON TRANSISTOR,
EPITAXIAL BASE
FEATURES:
• LF Large Signal Power Amplification
• Medium Current Switching
V
CBO
Collector – Base Voltage (Open Emitter)
V
CEO
Collector – Emitter Voltage (Open Base)
V
CER
Collector – Emitter Voltage R
BE
=100
W
V
CEX
Collector – Base Voltage V
BE
= +1.5V
V
EBO
Emitter – Base Voltage
I
C
Collector Current
I
B
Base Current
P
tot
Power Dissipation
T
J
Maximum Junction Temperature
T
STG
Storage Temperature
R
th-(j-c)
Junction to Case.
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
TO66 Package.
Pin 1 – Base Pin 2 – Emitter Case - Collector
3.68
(0.145) rad.
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
max.
4.83 (0.190)
5.33 (0.210)
3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
9.14 (0.360)
min.
6.35 (0.250)
8.64 (0.340)
1.27 (0.050)
1.91 (0.750)
11.94 (0.470)
12.70 (0.500)
Parameter Test Conditions Min. Typ. Max. Unit
BDX14AA
Prelim. 02/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
mA
V
V
—
V
V
MHz
-1
-5
-55
-60
-7
25 250
-1
-1.7
4
I
CEX
V
CEO(SUS)*
V
CER(SUS)*
V
(BR)EBO*
h
21E
*
V
CE(sat)*
V
BE*
f
T
Collector Emitter Cut Off Current
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Static Forward Current Transfer Ratio
Collector Emitter Saturation Voltage
Base Emitter Voltage
Transition Frequency
V
CE
= -90V VBE= +1.5V
VCE= -30V VBE= +1.5V
T
case
= 150°C
IC= -100mA IB= 0
IC= -100mA RBE= 100
W
IE= -1A IC=0
VCE= - 4V IC= - 0.5A
IC= - 0.5A IB= - 0.05A
VCE= - 4V IC= - 0.5A
VCB= -10V IC= - 0.2A
f = 1MHz
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
* Pulse test tp= 300ms , d< 2%
Loading...