Seme BDS21, BDS20SMD, BDS20 Datasheet

BDS20 BDS20SMD
BDS21 BDS21SMD

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim. 7/00

ABSOLUTE MAXIMUM RATINGS (T

case

=25°C unless otherwise stated)

BDS20 BDS21

NPN PNP

V

CBO

Collector - Base voltage (IE= 0)

V

CEO

Collector - Emitter voltage (IB= 0)

V

EBO

Emitter - Base voltage (IC= 0)

I

C(PK)

Peak collector current

I

B

Base current

P

tot

Total power dissipation at T

case

£

75°C

T

stg

Storage Temperature

T

j

Junction Temperature

80V –80V
80V –80V

5V –5V
5A –5A

0.1A –0.1A
50W

–65 to 200°C

200°C

MECHANICAL DATA

Dimensions in mm

SILICON PNP
EPITAXIAL BASE IN
TO220 METAL AND

SMD1 CERAMIC SURFACE

MOUNT PACKAGES

FEATURES

• HERMETIC METAL OR CERAMIC PACKAGES

• HIGH RELIABILITY

• MILITARY AND SPACE OPTIONS

• SCREENING TO CECC LEVELS

• FULLY ISOLATED (METAL VERSION)

APPLICATIONS

• POWER LINEAR AND SWITCHING
APPLICATIONS

• GENERAL PURPOSE POWER

TO220M - TO220 Metal Package - Isolated
SMD1 - Ceramic Surface Mount Package

Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter

16.5

13.5

10.6

123

13.70

2.54
BSC

0.89

(0.035)

3.70 (0.146)

3.41 (0.134)

4.14 (0.163)

3.84 (0.151)

min.

0.76
(0.030)

10.69 (0.421)

10.39 (0.409)

min.

13

2

10.6

3.70 (0.146)

3.41 (0.134)

3.6

Dia.

16.02 (0.631)

0.8

15.73 (0.619)

4.6

2.70
BSC

1.0

3.60 (0.142)
Max.

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

0.50 (0.020)

0.26 (0.010)

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim. 7/00

BDS20 BDS20SMD
BDS21 BDS21SMD

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

Collector cut-off current
(IE= 0)
Collector cut-off current
(IB= 0)
Emitter cut-off current
(IC= 0)
Collector - Emitter
sustaining voltage (IB= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage

DC Current gain

VCB= 80V

VCE= 40V

VEB= 5V

IC= 30mA
IC= 3A IB= 12mA

IC= 5A IB= 20mA
IC= 3A VCE= 3V
IC= 0.5A VCE= 3V
IC= 3A VCE= 3V

0.2

0.5

2

120

2
4

2.5
1000
1000

mA

mA

mA

V

V
V

I

CBO

I

CEO

I

EBO

V

CEO(sus)*

V

CE(sat)*

V

BE(on)*

h

FE*

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%

THERMAL DATA

R

THj-case

Thermal resistance junction - case Max. 2.5°C/W

R

THj-a

Thermal resistance junction - ambient Max. 62.5°C/W