Seme BDS19SMD, BDS19, BDS18SMD, BDS18 Datasheet

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4/00

BDS18 BDS18SMD
BDS19 BDS19SMD

BDS18 BDS19

V

CBO

Collector - Base voltage (IE= 0)

V

CEO

Collector - Emitter voltage (IB= 0)

V

EBO

Emitter - Base voltage (IC= 0)

I

E

, I

C

Emitter , Collector current

I

B

Base current

P

tot

Total power dissipation at T

case

£

75°C

T

stg

Storage Temperature

T

j

Junction Temperature

–120V –150V
–120V –150V

–5V
–8A
–2A

50W

–65 TO 200°C

200°C

MECHANICAL DATA

Dimensions in mm

SILICON PNP
EPITAXIAL BASE IN
TO220 METAL AND

SMD1 CERAMIC SURFACE

MOUNT PACKAGES

FEATURES

• HERMETIC METAL OR CERAMIC
PACKAGES

• HIGH RELIABILITY

• MILITARY AND SPACE OPTIONS

• SCREENING TO CECC LEVELS

• FULLY ISOLATED (METAL VERSION)

APPLICATIONS

• POWER LINEAR AND SWITCHING
APPLICATIONS

• GENERAL PURPOSE POWER

ABSOLUTE MAXIMUM RATINGS (T

case

=25°C unless otherwise stated)

TO220M - TO220 Metal Package - Isolated
SMD1 - SMD1 Ceramic Surface Mount Package

Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter

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16.5

13.5

10.6

123

13.70

2.54
BSC

0.89

(0.035)

min.

3.70 (0.146)

3.41 (0.134)

4.14 (0.163)

3.84 (0.151)

min.

0.76
(0.030)

10.69 (0.421)

10.39 (0.409)

3.70 (0.146)

3.41 (0.134)

13

2

10.6

3.6

Dia.

16.02 (0.631)

0.8

15.73 (0.619)

4.6

2.70
BSC

1.0

3.60 (0.142)
Max.

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

0.50 (0.020)

0.26 (0.010)

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BDS18 BDS18SMD
BDS19 BDS19SMD

Parameter Test Conditions Max. Unit

R

THj-case

Thermal resistance junction - case Max. 2.5°C/W

R

THj-a

Thermal resistance junction - ambient Max. 62.5°C/W

Parameter Test Conditions Min. Typ. Max. Unit

Collector cut-off current
(IE= 0)
Collector cut-off current
(IB= 0)
Emitter cut-off current
(IC= 0)
Collector - Emitter
sustaining voltage (IB= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage

DC Current gain
Transition frequency

BDS18 VCB= –120V
BDS19 VCB= –150V
BDS18 VCE= –60V
BDS19 VCE= –75V

VEB= –5V

BDS18
BDS19

IC= –1A IB= –0.1A
IC= –1A VCE= –2V

IC= –0.5A VCE= –2V
IC= –4A VCE= –2V
IC= –0.5A VCE= –10V

–20

–20
–0.1
–0.1

–10

–120
–150

–0.5
–1.0

40 250
15 150
30

m

A

mA

m

A

V
V

V
V

MHz

I

CBO

I

CEO

I

EBO

V

CEO(sus)*

V

CE(sat)*

V

BE(on)*

h

FE*

f

T

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

THERMAL DATA

IC= –100mA

t

on

t

s

t

f

On Time (td+ tr)
Storage Time

Fall Time

IC= 2A VCC= –80V

IB1= 0.2A

IC= 2A VCC= –80V

IB1= –IB2= 0.2A

0.5

1.5

0.3

m

s

m

s

m

s

SWITCHING CHARACTERISTICS

*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%