Seme BDS17SMD, BDS17, BDS16SMD, BDS16 Datasheet

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 7/00
BDS16 BDS16SMD BDS17 BDS17SMD
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BDS16 BDS17
V
Collector - Base voltage (IE= 0)
V
Collector - Emitter voltage (IB= 0)
V
EBO
Emitter - Base voltage (IC= 0)
I
E
, I
C
Emitter , Collector current
I
B
Base current
P
tot
Total power dissipation at T
case
£
75°C
T
stg
Storage Temperature
T
j
Junction Temperature
120V 150V 120V 150V
5V 8A 2A
50W
–65 TO 200°C
200°C
MECHANICAL DATA
Dimensions in mm
SILICON NPN
EPITAXIAL BASE
IN TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
• FULLY ISOLATED (METAL VERSION)
APPLICATIONS
• POWER LINEAR AND SWITCHING APPLICATIONS
• GENERAL PURPOSE POWER
ABSOLUTE MAXIMUM RATINGS (T
case
=25°C unless otherwise stated)
TO220M - TO220 Metal Package - Isolated SMD1 - Ceramic Surface Mount Package
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
16.5
13.5
10.6
123
13.70
2.54 BSC
0.89
(0.035)
min.
3.70 (0.146)
3.41 (0.134)
4.14 (0.163)
3.84 (0.151)
min.
0.76 (0.030)
10.69 (0.421)
10.39 (0.409)
3.70 (0.146)
3.41 (0.134)
13
2
10.6
3.6
Dia.
16.02 (0.631)
0.8
15.73 (0.619)
4.6
2.70 BSC
1.0
3.60 (0.142) Max.
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
0.50 (0.020)
0.26 (0.010)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 7/00
BDS16 BDS16SMD BDS17 BDS17SMD
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Max. Unit
R
THj-case
Thermal resistance junction - case Max. 2.5°C/W
R
THj-a
Thermal resistance junction - ambient Max. 62.5°C/W
Parameter Test Conditions Min. Typ. Max. Unit
Collector cut-off current (IE= 0) Collector cut-off current (IB= 0) Emitter cut-off current (IC= 0) Collector - Emitter sustaining voltage (IB= 0) Collector - Emitter saturation voltage Base - Emitter voltage
DC Current gain Transition frequency
BDS16 VCB= 120V BDS17 VCB= 150V BDS16 VCE= 60V BDS17 VCE= 75V
VEB= 5V
BDS16 BDS17
IC= 1A IB= 0.1A IC= 1A VCE= 2V
IC= 0.5A VCE= 2V IC= 4A VCE= 2V IC= 0.5A VCE= 10V
20 20
0.1
0.1 10
120 150
0.5
1.0
40 250 15 150 30
m
A
mA
m
A
V V
V V
MHz
I
I
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
f
T
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
THERMAL DATA
IC= 100mA
t
on
t
s
t
f
On Time (td+ tr) Storage Time
Fall Time
IC= 2A VCC= 80V
IB1= 0.2A
IC= 2A VCC= 80V
IB1= –IB2= 0.2A
0.5
3.0
0.4
m
s
m
s
m
s
SWITCHING CHARACTERISTICS
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
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