Seme BDS14SMD, BDS14, BDS13SMD, BDS13, BDS15SMD Datasheet
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LAB
SEME
BDS13 BDS13SMD
BDS14 BDS14SMD
BDS15 BDS15SMD
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
PRELIM. 7/00
V
CBO
Collector - Base voltage (IE= 0)
V
CEO
Collector - Emitter voltage (IB= 0)
V
EBO
Emitter - Base voltage (IC= 0)
I
E
, I
C
Emitter , Collector current
I
B
Base current
P
tot
Total power dissipation at T
case
£
75°C
T
stg
Storage Temperature
T
j
Junction Temperature
–60V –80V –100V
–60V –80V –100V
–5V
–15A
–5A
90W
–65 TO 200°C
200°C
MECHANICAL DATA
Dimensions in mm
SILICON PNP
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
• FULLY ISOLATED (METAL VERSION)
APPLICATIONS
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
ABSOLUTE MAXIMUM RATINGS (T
case
=25°C unless otherwise stated)
BDS13 BDS14 BDS15
TO220M - TO220 Metal Package - Isolated
SMD1 - Ceramic Surface Mount Package
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
16.5
13.5
10.6
123
13.70
2.54
BSC
0.89
(0.035)
3.70 (0.146)
3.41 (0.134)
min.
10.6
3.70 (0.146)
3.41 (0.134)
3.6
Dia.
0.8
4.6
2.70
BSC
1.0
3.60 (0.142)
Max.
13
4.14 (0.163)
3.84 (0.151)
min.
0.76
(0.030)
2
10.69 (0.421)
10.39 (0.409)
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
LAB
SEME
BDS13 BDS13SMD
BDS14 BDS14SMD
BDS15 BDS15SMD
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
PRELIM. 7/00
Parameter Test Conditions Min. Typ. Max. Unit
Collector cut-off current
(IE= 0)
Collector cut-off current
(IB= 0)
Emitter cut-off current
(IC= 0)
Collector - Emitter
sustaining voltage (IB= 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
BDS13 V
CB
= –60V
BDS14 V
CB
= –80V
BDS15 V
CB
= –100V
BDS13 V
CE
= –30V
BDS14 V
CE
= –40V
BDS15 V
CE
= –50V
VEB= –5V
BDS13
BDS14 I
C
= –100mA
BDS15
IC= –5A IB= –0.5A
IC= –10A IB= –2.5A
IC= –10A IB= –2.5A
IC= –5A VCE= –4V
IC= –0.5A VCE= –4V
IC= –5A VCE= –4V
IC= –10A VCE= –4V
IC= –0.5A VCE= –4V
–500
–500
–500
–1
–1
–1
–1
–60
–80
–100
–1
–3
–2.5
–1.5
40 250
15 150
5
3
m
A
mA
mA
V
V
V
V
MHz
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
THERMAL DATA
R
THj-case
Thermal resistance junction - case Max. 1.4°C/W
R
THcase-sink
Thermal resistance case - heatsink ** Typ. 1.0°C/W
R
THj-a
Thermal resistance junction - ambient Max. 80°C/W
** Smooth flat surface using thermal grease.
Parameter Test Conditions Max. Unit
t
on
t
s
t
r
On Time (td+ tr)
Storage Time
Fall Time
IC= 4A VCC= 30V IB1= 0.4A
IC= 4A VCC= 30V
IB1= –IB2= 0.4A
0.7
1.0
0.8
m
s
m
s
m
s
SWITCHING CHARACTERISTICS
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