Seme BDS12SMD, BDS12, BDS11SMD, BDS11, BDS10SMD Datasheet
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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 7/00
V
CBO
Collector - Base voltage (IE= 0)
V
CEO
Collector - Emitter voltage (IB= 0)
V
EBO
Emitter - Base voltage (IC= 0)
I
E
, I
C
Emitter , Collector current
I
B
Base current
P
tot
Total power dissipation at T
case
£
75°C
T
stg
Storage Temperature
T
j
Junction Temperature
60V 80V 100V
60V 80V 100V
5V
15A
5A
90W
–65 to 200°C
200°C
LAB
SEME
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
MECHANICAL DATA
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS (T
case
=25°C unless otherwise stated)
BDS10 BDS11 BDS12
SILICON NPN
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
• FULLY ISOLATED (METAL VERSION)
APPLICATIONS
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
TO220M - TO220 Metal Package - Isolated
SMD1 - Ceramic Surface Mount Package
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
16.5
13.5
10.6
123
13.70
2.54
BSC
0.89
(0.035)
min.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
10.6
3.6
Dia.
0.8
4.6
2.70
BSC
1.0
3.60 (0.142)
Max.
13
4.14 (0.163)
3.84 (0.151)
min.
0.76
(0.030)
2
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 7/00
Parameter Test Conditions Min. Typ. Max. Unit
LAB
SEME
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
BDS10 VCB= 60V
BDS11 VCB= 80V
BDS12 VCB= 100V
BDS10 VCE= 30V
BDS11 VCE= 40V
BDS12 VCE= 50V
VEB= 5V
BDS10
BDS11 IC= 100mA
BDS12
IC= 5A IB= 0.5A
IC= 10A IB= 2.5A
IC= 10A IB= 2.5A
IC= 5A VCE= 4V
IC= 0.5A VCE= 4V
IC= 5A VCE= 4V
IC= 10A VCE= 4V
IC= 0.5A VCE= 4V
500
500
500
1
1
1
1
60
80
100
1
3
2.5
1.5
40 250
15 150
5
3
m
A
mA
mA
V
V
V
V
MHz
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
THERMAL DATA
R
THj-case
Thermal resistance junction - case Max. 1.4°C/W
R
THcase-sink
Thermal resistance case - heatsink ** Typ. 1.0°C/W
R
THj-a
Thermal resistance junction - ambient Max. 80°C/W
** Smooth flat surface using thermal grease.
Parameter Test Conditions Max. Unit
t
on
t
s
t
r
On Time (td+ tr)
Storage Time
Fall Time
IC= 4A VCC= 30V IB1= 0.4A
IC= 4A VCC= 30V
IB1= –IB2= 0.4A
0.7
1.0
0.8
m
s
m
s
m
s
SWITCHING CHARACTERISTICS
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(sat)*
V
BE*
h
FE*
f
T
Collector cut-off current
(IE= 0)
Collector cut-off current
(IB= 0)
Emitter cut-off current
(IC= 0)
Collector - Emitter
sustaining voltage (IB= 0)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
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