Seme BCY89 Datasheet

BCY89
Prelim.5/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
APPLICATIONS
• Differential Amplifier
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
P
TOT
Total Power Dissipation
T
J
Junction Temperature
45V 40V
150mW
175°C
MECHANICAL DATA Dimensions in mm
5.3
max
12.7
min.
2.54
5 .8 m a x
1.17 m ax
1.16 m ax
45
o
1e
2e
2c
1c
1b
2b
0.51 max
4.8 m ax
TO71 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
NPN SILICON PLANAR DUAL
TRANSISTORS
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Unit
10 100 450 100 600
10 50
3.5 4
5
I
CBO
h
FE
f
T
Cc
NF
BCY89
Prelim.5/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Collector Cut-Off Current DC Current Gain
Transistion Frequency Collector-Capacitance at f = 1MHz
Noise Figure
nA
MHz
pF
dB
0.67-1.5
10mV
300nA
VCB= 20V IE= 0 IC= 50mAVCB= 10V IC= 10mA VCB= 10V
-IE= 50mAVCB= 10V
-IE= 50mAVCB= 10V IE= Ie = 0 VCB= 10V IC= 50µA VCE= 5V f =10Hz to15Hz RS= 10k
W
IC= 50µA VCE= 5V f =200H
z R
S
= Opt.
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
|1C/|2C| Ratio of Collector Currents V
1B-1E
= V
2B-2E
|V
1B-1E-V2B-2E
|Difference between Base-Emitter Voltages
|
|
1B-|2B
| Difference between Base Currents
h
1FE/h2FE
D.C. Current Gain Ration
MATCHING CHARACTERISTICS
V
1B-1E =V2B-2E
|1C= |2C|
V
1B-1E
= V
2B-2E
|1C= |2C|
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