Seme BCX19CSM4 Datasheet

Prelim.8/00

BCX19CSM4

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

GENERAL PURPOSE NPN TRANSIST OR

IN A HERMETICALLY SEALED

CERAMIC SURFA CE MOUNT PACKA GE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR

• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE

• CECC SCREENING OPTIONS

• SPACE QUALITY LEVELS OPTIONS

V

CBO

Collector - Base Voltage

V

CEO

Collector - Emitter Voltage

V

EBO

Emitter - Base Voltage

I

C

Collector Current

P

D

Total Device Dissipation

P

D

Derate above 50°C

R

ja

Thermal Resistance Junction to Ambient

T

stg,Tj

Storage Temperature, Operating Temp Range

50V
45V

5V

500mA

350mW

2.0mW / °C
350°C / W

–55 to 200°C

MECHANICAL DATA

Dimensions in mm (inches)

SOT 23 CERAMIC
(LCC3 PACKAGE)

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

PAD 1 = Collector
PAD 2 = No Collection

PAD 3 = Emitter
PAD 4 = Base

1

23

4

5.59 ± 0.13

(0.22 ± 0.005)

0.23

(0.009)

rad.

1.02 ± 0.20

(0.04 ± 0.008)

2.03 ± 0.20

(0.08 ± 0.008)

1.40 ± 0.15

(0.055 ± 0.006)

0.25 ± 0.03

(0.01 ± 0.001)

0.23

(0.009)

min.

1.27 ± 0.05
(0.05 ± 0.002)

3.81 ± 0.13
(0.15 ± 0.005)

0.64 ± 0.08
(0.025 ± 0.003)

V

CEO

= 45V

I

C

= 500mA

Prelim.8/00

BCX19CSM4

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min

Parameter Test Conditions Min. Typ. Max. Unit

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

V

BE

= 0
IC= 10mA
IE= 10mAIC= 0
IE= 0 VCB= 20V
TC= 150°C
VBE= 0.5V IC= 0
IC= 500mA IB= 50mA
IC= 500mA IB= 50mA

IC= 100mA VCE= 1V
IC= 300mA VCE= 1V
IC= 500mA VCE= 1V

V

CES*

Collector – Emitter Sustaining Voltage

V

CEO*

Collector – Base Voltage

V

EBO*

Emitter – Base Breakdown Voltage

I

CBO*

Collector – Base Cut-off Current

I

EBO*

Emitter Base Cut-off Current

V

CE(sat)*

Collector – Emitter Saturation Voltage

V

BE(sat)*

Base – Emitter Saturation Voltage

h

FE*

DC Current Gain

50
45

5

100

5

10

0.62

1.2

100 600

70
40

V

nA

m

A

m

A

V

—

f

T

Transition Frequency

C

ob

Output Capacitance

IC= 10mA VCE= 5V f = 35MHz
VCB= 10V IE= 0 f = 1.0MHz

100

8

MHz

pF

* Pulse test tp = 300ms ,

d £

2%

DYNAMIC CHARACTERISTICS (T

case

= 25°C unless otherwise stated)