Seme 2N918CSM Datasheet
2N918CSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
GENERAL PURPOSE, SMALL SIGNAL
NPN TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N918 for high reliability
applications requiring small size and low
weight devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ TA=25°C
Derate above 25°C
P
D
Total Device Dissipation @ TC=25°C
Derate above 25°C
T
STG
, T
J
Operating and Storage Temperature Range
30V
15V
3V
50mA
200mW
1.14mW / °C
300mW
1.71mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
2N918CSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
Parameter Test Conditions Min. Typ. Max. Unit
IC= 3mA IB= 0
IC= 1µAI
E
= 0
IE= 10µAIC= 0
VCB= 25V IE= 0
IC= 10mA IB= 1mA
IC= 10mA IB= 1mA
IC= 500µAVCE= 10V
IC= 3mA VCE= 1V
IC= 10mA VCE= 10V
IC= 4mA VCE= 10V
f = 100MHz
IE= 0 VCB= 10V
f = 140kHz VCB= 0
VEB= 0.5V IC= 0
f = 140kHz
IC= 1mA VCE= 6V
RG= 400Ω f = 60MHz
IC= 6mA VCB= 12V
f = 200MHz
IC= 8mA VCB= 15V
f = 500MHz
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
V
CEO(sus)
Collector – Emitter Sustaining Voltage
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CBO
Collector – Base Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE
DC Current Gain
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
NF Noise Figure
G
pe
Amplifier Power Gain
P
O
Power Output
η Collector Efficiency
15
30
3
0.010
0.4
1.0
10
20 200
20
600
1.7
3.0
2.0
6.0
15
30
25
V
µA
V
—
MHz
pF
pF
dB
mW
%
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