Seme 2N7086 Datasheet
MECHANICAL DATA
Dimensions in mm(inches)
2N7086
N–CHANNEL
4.83 (0.190)
5.08 (0.200)
Dia.
16.38 (0.645)
16.89 (0.665)
10.41 (0.410)
10.67 (0.420)
13.38 (0.527)
13.64 (0.537)
10.41 (0.410)
10.92 (0.430)
3.56 (0.140)
3.81 (0.150)
0.89 (0.035)
1.14 (0.045)
123
12.07 (0.500)
19.05 (0.750)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
0.64 (0.025)
0.89 (0.035)
Dia.
TO–257AB Metal Package
Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
ENHANCEMENT MODE
TRANSISTOR
V
(BR)DSS
I
D(A)
R
DS(on)
FEATURES
• TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
• SCREENING OPTIONS AVAILBLE
• SIMPLE DRIVE REQUIREMENTS
200V
14A
0.16
ΩΩ
ABSOLUTE MAXIMUM RATINGS (T
V
V
I
I
P
T
T
DS
GS
D
DM
D
J
L
, T
stg
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current TC= 25°C
Pulsed Drain Current
1
Power Dissipation TC= 25°C
Operating and Storage Temperature Range
1
Lead Temperature (
/
” from case for 10 sec.)
16
= 25°C unless otherwise stated)
case
= 100°C
T
C
= 100°C
T
C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
200V
±20V
14A
8.5A
56A
60W
23W
–55 to 150°C
300°C
Prelim. 1/99
2N7086
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
J
Parameter Test Conditions Min. Typ. Max. Unit
STATIC ELECTRICAL RATINGS
BV
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
(BR)DSS
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current
1
Static Drain – Source On–State
Resistance
Forward Transconductance
1
1
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
g
gs
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn–On Delay Time
Rise Time
2
Turn–Off Delay Time
Fall Time
2
2
2
2
2
2
SOURCE – DRAIN DIODE CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
1
Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
2
Independent of Operating Temperature
3
Pulse width Limited by maximum Junction Temperature
Continuous Current
Pulse Current
3
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS= 0 ID= 250µA
VDS= V
VDS= 0 VGS= ±20V
VDS= 160V
VGS= 0 TJ= 125°C
VDS= 10V VGS= 10V
VGS= 10V
ID= 8.5A TJ= 125°C
VDS= 15V IDS= 8.5A
VGS= 0
VDS= 25V
f = 1MHz
VDS= 0.5 x V
VGS= 10V ID= 14A
VDD= 100V ID= 14A
V
GEN
RL= 7.1Ω
RG= 4.7Ω
IF= I
IF= I
dIF/dt = 100A/µs
=10V
S
S
GS
ID= 250µA
(BR)DSS
VGS= 0
200
24
±100
V
V
nA
25
µA
250
14
A
0.14 0.16
Ω
0.25 0.30
5.0
S
1550
500
pF
220
30 44 77
4.6 10 15
nC
13 26 35
10 30
60 100
30 80
ns
40 95
114
A
56
2.0
150 650
0.5
V
ns
µC
THERMAL RESISTANCECHARACTERISTICS
Parameter Min. Typ. Max. Unit
R
R
R
thJC
thJA
thCS
Thermal resistance Junction-Case 2.1
Thermal resistance Junction-ambient 80 K/W
Thermal resistance Junction-ambient 1.0
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 1/99
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