Seme 2N7085 Datasheet

2N7085
Prelim. 7/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
V
DS
V
GS
Gate – Source Voltage
I
D
Continuous Drain Current (TJ= 150°C) TC= 25°C
T
C
= 100°C
I
DM
Pulsed Drain Current
P
D
Power Dissipation TC= 25°C
T
C
= 100°C
T
J
, T
stg
Operating Junction and Storage Temperature Range
T
L
Lead Temperature (
1
/
16
” from case for 10 sec.)
100V ±20V
20A 12A
80A 60W 20W
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm(inches)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
TO–257AB Metal Package
N–CHANNEL
ENHANCEMENT MODE
TRANSISTOR
FEATURES
• TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS
• SCREENING OPTIONS AVAILBLE
• SIMPLE DRIVE REQUIREMENTS
Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
V
(BR)DSS
100V
I
D(A)
20A
R
DS(on)
0.075
WW
WW
4.83 (0.190)
5.08 (0.200)
Dia.
16.38 (0.645)
16.89 (0.665)
10.41 (0.410)
10.67 (0.420)
13.38 (0.527)
13.64 (0.537)
10.41 (0.410)
10.92 (0.430)
3.56 (0.140)
3.81 (0.150)
0.89 (0.035)
1.14 (0.045)
123
12.07 (0.500)
19.05 (0.750)
2.54 (0.100) BSC
3.05 (0.120) BSC
0.64 (0.025)
0.89 (0.035)
Dia.
Parameter Min. Typ. Max. Unit
R
thJC
Thermal resistance Junction-Case 2.1
R
thJA
Thermal resistance Junction-ambient 80
°C/W
R
thCS
Thermal resistance Case to Sink 1.0
2N7085
Prelim. 7/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
VGS= 0 ID= 250µA VDS= V
GS
ID= 250µA VDS= 0 VGS= ±20V VDS= 80V VGS= 0 TJ= 125°C VDS= 10V VGS= 10V VGS= 10V ID= 12A TJ= 125°C VDS= 15V IDS= 12A
VGS= 0 VDS= 25V f = 1MHz
VDS= 0.5 x V
(BR)DSS
50V
VGS= 10V ID= 20A VDD= 50V ID= 20A
V
GEN
=10V
RL= 2.5
W
RG= 4.7
W
IF= 20A VGS= 0 I
F
= 20A
di/dt = 100A/µs
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
Drain–Source Breakdown Voltage Gate Threshold Voltage Gate – Body Leakage
Zero Gate Voltage Drain Current On–State Drain Current
1
Drain – Source On–State Resistance
1
Forward Transconductance
1
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
2
Gate Source Charge
2
Gate Drain Charge
2
Turn–On Delay Time
2
Rise Time
2
Turn–Off Delay Time
2
Fall Time
2
Continuous Current Pulsed Current Diode Forward Voltage
1
Reverse Recovery Time Reverse Recovery Charge
100
24
±100
25
250
20
0.06 0.075
0.11 0.14
5.0 8.0
1400
480 110
35 50 10 20 18 25 13 30 85 120 35 80 75 95
20 80
2.5
150 400
0.5
V V
nA µA
A
W
S
pF
nC
ns
A V
ns
µC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
1
Pulse test : Pulse Width < 300ms ,Duty Cycle < 2%
2
Independent of Operating Temperature