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2N7085
Prelim. 7/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
V
DS
Drain – Source Voltage
V
GS
Gate – Source Voltage
I
D
Continuous Drain Current (TJ= 150°C) TC= 25°C
T
C
= 100°C
I
DM
Pulsed Drain Current
P
D
Power Dissipation TC= 25°C
T
C
= 100°C
T
J
, T
stg
Operating Junction and Storage Temperature Range
T
L
Lead Temperature (
1
/
16
” from case for 10 sec.)
100V
±20V
20A
12A
80A
60W
20W
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm(inches)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
TO–257AB Metal Package
N–CHANNEL
ENHANCEMENT MODE
TRANSISTOR
FEATURES
• TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
• SCREENING OPTIONS AVAILBLE
• SIMPLE DRIVE REQUIREMENTS
Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
V
(BR)DSS
100V
I
D(A)
20A
R
DS(on)
0.075
WW
WW
4.83 (0.190)
5.08 (0.200)
Dia.
16.38 (0.645)
16.89 (0.665)
10.41 (0.410)
10.67 (0.420)
13.38 (0.527)
13.64 (0.537)
10.41 (0.410)
10.92 (0.430)
3.56 (0.140)
3.81 (0.150)
0.89 (0.035)
1.14 (0.045)
123
12.07 (0.500)
19.05 (0.750)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
0.64 (0.025)
0.89 (0.035)
Dia.
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Parameter Min. Typ. Max. Unit
R
thJC
Thermal resistance Junction-Case 2.1
R
thJA
Thermal resistance Junction-ambient 80
°C/W
R
thCS
Thermal resistance Case to Sink 1.0
2N7085
Prelim. 7/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
VGS= 0 ID= 250µA
VDS= V
GS
ID= 250µA
VDS= 0 VGS= ±20V
VDS= 80V
VGS= 0 TJ= 125°C
VDS= 10V VGS= 10V
VGS= 10V
ID= 12A TJ= 125°C
VDS= 15V IDS= 12A
VGS= 0
VDS= 25V
f = 1MHz
VDS= 0.5 x V
(BR)DSS
50V
VGS= 10V ID= 20A
VDD= 50V ID= 20A
V
GEN
=10V
RL= 2.5
W
RG= 4.7
W
IF= 20A VGS= 0
I
F
= 20A
di/dt = 100A/µs
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
THERMAL RESISTANCECHARACTERISTICS
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current
1
Drain – Source On–State
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate Source Charge
2
Gate Drain Charge
2
Turn–On Delay Time
2
Rise Time
2
Turn–Off Delay Time
2
Fall Time
2
Continuous Current
Pulsed Current
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
100
24
±100
25
250
20
0.06 0.075
0.11 0.14
5.0 8.0
1400
480
110
35 50
10 20
18 25
13 30
85 120
35 80
75 95
20
80
2.5
150 400
0.5
V
V
nA
µA
A
W
S
pF
nC
ns
A
V
ns
µC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
1
Pulse test : Pulse Width < 300ms ,Duty Cycle < 2%
2
Independent of Operating Temperature