Seme 2N7081-220M-ISO Datasheet
MECHANICAL DATA
Dimensions in mm(inches)
2N7081–220M–ISO
N–CHANNEL
16.38 (0.645)
16.89 (0.665)
4.83 (0.190)
10.41 (0.410)
10.67 (0.420)
13.38 (0.527)
13.64 (0.537)
10.41 (0.410)
10.92 (0.430)
0.89 (0.035)
1.14 (0.045)
3.56 (0.140)
3.81 (0.150)
5.08 (0.200)
Dia.
POWER MOSFET
V
DSS
I
D(cont)
R
DS(on)
100V
11A
0.15
ΩΩ
123
FEATURES
12.07 (0.500)
19.05 (0.750)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
0.64 (0.025)
0.89 (0.035)
Dia.
• TO–220 ISOLATED HERMETIC PACKAGE
• LOW RDS
(ON)
• SIMPLE DRIVE REQUIREMENTS
TO–220 Metal Package
Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS (T
V
V
I
I
P
T
T
DS
GS
D
DM
D
J
L
, T
stg
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current TC= 25°C
Pulsed Drain Current
1
Power Dissipation TC= 25°C
Operating and Storage Temperature Range
Lead Temperature (
1
/
” from case for 10 sec.)
16
= 25°C unless otherwise stated)
case
= 100°C
T
C
= 100°C
T
C
100V
±20V
11A
7.7A
48A
45W
18W
–55 to 150°C
300°C
Semelab plc Telephone (01455) 556565 Fax (01455) 552612.
E-mail: sales@semelab.co.uk Web site: http://www.semelab.co.uk
Prelim. 6/98
2N7081–220M–ISO
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
STATIC ELECTRICAL RATINGS
BV
V
GS(th)
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
R
θJC
R
θJA
R
θCS
Drain – Source Breakdown Voltage
DSS
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current
Static Drain – Source On–State
Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
VGS= 0 ID= 250µA
VDS= V
VDS= 0 VGS= ±20V
VDS= 80V
VGS= 0 TJ= 125°C
VDS= 10V VGS= 10V
VGS= 10V
ID= 7.7A TJ= 125°C
VDS= 15V IDS= 7.7A
VGS= 0
VDS= 25V
f = 1MHz
VDD= 50V ID= 11A
V
GEN
RL= 4.1Ω
RG= 7.5Ω
IF=11 VGS= 0
IF= I
dIF/dt = 100A/µs
= 25°C unless otherwise stated)
J
GS
ID= 250µA
=10V
S
100
24
±100
V
V
nA
25
µA
250
11
A
0.12 0.15
Ω
0.22 0.27
45
S
600
190
pF
35
7
45
ns
30
10
12
A
48
2.5
100 300
0.7
V
ns
µC
2.8
80
K/W
1
Semelab plc Telephone (01455) 556565 Fax (01455) 552612.
E-mail: sales@semelab.co.uk Web site: http://www.semelab.co.uk
Prelim. 6/98
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