Seme 2N7000CSM Datasheet
Prelim. 8/00
2N7000CSM
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk
Website: http://www.semelab.co.uk
* Pulse width limited by maximum junction temperature.
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
•V
(BR)DSS
= 60V
• RDS
(ON)
= 5
WW
WW
•I
D
= 200mA
• Hermetic Ceramic Surface Mount
package
• Screening Options Available
V
DS
Drain – Source Voltage
V
GS
Gate – Source Voltage
I
D
Drain Current @ T
CASE
= 25°C
I
DM
Pulsed Drain Current *
P
D
Power Dissipation @ T
CASE
= 25°C
T
j
Operating Junction Temperature Range
T
stg
Storage Temperature Range
60V
±40V
200mA
500mA
300mW
–55 to 150°C
–55 to 150°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°C unless otherwise stated)
SOT23 CERAMIC
(LCC1 PACKAGE)
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
PAD 1 – Gate
Underside View
PAD 2 – Source
PAD 3 – Drain
Parameter Min. Typ. Max. Unit
R
q
JA
Thermal Resistance, Junction to Ambient 416 °C/W
V
(BR)DSS
Gate – Source Breakdown Voltage
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate – Body Leakage Current
I
DSS
Zero Gate Voltage Drain Current
I
D(on)*
On–State Drain Current
R
DS(on)*
Drain – Source On Resistance
V
DS(on)*
Drain – Source On Voltage
g
FS*
Forward Transconductance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
ON
Turn–On Time
t
OFF
Turn–Off Time
Prelim. 8/00
2N7000CSM
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk
Website: http://www.semelab.co.uk
ELECTRICAL CHARACTERISTICS (T
CASE
= 25°C unless otherwise stated)
VGS= 0V ID= 10mA
VDS= V
GS
ID= 0.25mA
VGS= ±20VVDS= 0V
VDS= 60V VGS= 0V
T
CASE
= 125°C
VDS³
2V
DS(ON)VGS
= 4.5V
VGS= 10V
ID= 0.5A T
CASE
= 125°C
VGS= 4.5V ID= 75mA
VGS= 10V ID= 0.5A
VGS= 10V ID= 0.5A
VDS= 25V
VGS= 0V
f = 1MHz
VDD= 30V V
GEN
= 10V
RL= 150
W
RG= 25
W
ID= 0.2A
60 70
0.8 3.0
-10
1
1
75
5
9
0.4
2.5
100
60
25
5
10
10
V
nA
m
A
mA
mA
W
V
ms
pF
ns
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
* Pulse Test: PW = 80 ms , d£1%
Parameter Test Conditions Min. Typ. Max. Unit
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