Seme 2N6849 Datasheet

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

P–CHANNEL

POWER MOSFETs

V

DSS

- 100V

I

D(cont)

- 6.5A

R

DS(on)

0.30

WW

WW

Prelim. 9/00

LAB

SEME

2N6849

V

GS

Gate – Source Voltage*

V

DS

Drain – Source Voltage*

V

DG

Drain – Gate Voltage (RGS= 20kW)*

I

D

Continuous Drain Current @ TC= 25°C*

@ TC= 100°C*

I

DM

Pulsed Drain Current

2*

E

AS

Single Pulse Avalanche Current

3

P

D

Power Dissipation @ TC= 25°C*
Linear Derating Factor*

T

J

, T

STG

Operating and Storage Junction Temperature Range*

R

q

JC

Thermal Resistance Junction to Case*

R

q

JA

Thermal Resistance Junction to Ambient

±20V

-100V

-100V
–6.5A
–4.1A

–25A

500mJ

25W

0.2W/°C

–55 to +150°C

5°C/W

175°C/W

MECHANICAL DATA

Dimensions in mm (inches)

TO–39 METAL PACKAGE

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

4
4

Pin 1 = Emitter

Underside View

Pin 2 = Base Pin 3 = Collector

FEATURES

• Single pulse avalanche energy rated

• SOA is power dissipation limited

• Nanosecond switching speeds

• Linear transfer characteristics

• High input impedance

.19 (0.165)
.95 (0.195)

12.70

(0 .5 00 )

min.

0.89
max.

(0 .0 35 )

7.75 (0.305)

8.51 (0.335)
dia.

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

5.08 (0.200)
ty p .



!

45°

2.54

(0 .1 00 )

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim. 9/00

LAB

SEME

2N6849

Parameter Test Conditions Min. Typ. Max. Unit

V

W

V

nA

m

A

V

(S É )

pF

nC

ns

A

V

ns

m

C

—

-100

0.30*

-2 -4

-100
100

-250

-1000

- 2.1

2.5 3.5 7.5
500
300
100

25 45
13 23
12 22
30 60
70 140
70 140
70 140

-6.5

-25
4

250

1.8

negligible

VGS= 0 ID= 250mA
VGS= -10V ID= - 4.1A
VDS= V

GS

ID= - 0.25mA
VGS= - 20V
VGS= 20V
VDS= Max rating x 0.8
VGS= 0V TC= -125°C
V

DS

³

I

D(on)RDS(on)max.

VGS= -10V ID= - 6.5A
VDS= -5V ID= - 4.1A

VGS= 0V VDS= - 25V
f = 1.0 MHz

VGS= -15V ID= - 15A
VDS= 08v Max Rating

VDD= - 42V ID= - 4.1A
Zo = 50

W

Modified MOSFETSymbol
showing the integralreverse
P-N Junction rectifier.

VGS= 0 IS= 6.5A TJ= 25°C
I

F

= - 6.5A TJ= 25°C

di

F

/dt = 100 A/ms

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage*
Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage*
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Zero Gate Voltage Drain Current*

On-State Drain Voltage

1

Forward Transconductance

1

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continous Source Current*
Pulse Source Current |(Body Diode)

2

Diode Forward Voltage

1

Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time

BV

DSS

R

DS(on)

V

GS(th)

I

GSS

I

GSS

I

DSS

V

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

STATIC ELECTRICAL RATINGS

SOURCE – DRAIN DIODE CHARACTERISTICS

*JEDEC Registered Value

1 Pulse Test: Pulse Width £300ms, duty cycle £2%
2 Repetitive Rating: Pulse width limited by max. junction temperature
3 V

DD

= 25V starting Tj= 25.°C, L=17.25mH, R

G =

25

W,

Peak IL= 6.5A

D

G

S