Seme 2N6800 Datasheet

2N6800

LAB

SEME

9/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= 10V , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= 10V , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

dv/dt Peak Diode Recovery

3

TJ, T

stg

Operating and Storage Temperature Range

R

q

JC

Thermal Resistance Junction to Case

R

q

JCA

Thermal Resistance Junction-to-Ambient

±20V

3A
2A

12A

25W

0.20W/°C
4V/ns

–55 to 150°C

5.0°C/W

175°C/W

MECHANICAL DATA

Dimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

TO39 – Package

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) @ VDD= 50V , L ³0.100mH , RG= 25W, Peak IL= 1.5A , Starting TJ= 25°C

3) @ ISD£

1.5A , di/dt £50A/ms , VDD£

BV

DSS

, TJ£

150°C , SUGGESTED RG= 7.5

W

N–CHANNEL

POWER MOSFET

FEATURES

• AVALANCHE ENERGY RATED

• HERMETICALLY SEALED

• DYNAMIC dv/dt RATING

• SIMPLE DRIVE REQUIREMENTS

Pin 1 – Source Pin 2 – Gate Pin 3 – Drain

BV

DSS

400V

I

D

3.0A

R

DS(on)

1.0

WW

WW

Also available in a low profile version.

6.10 (0.240)

6.60 (0.260)

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

0.89
max.

(0.035)

12.70

(0.500)

min.

7.75 (0.305)

8.51 (0.335)
dia.

5.08 (0.200)
ty p .

2.54

(0.100)

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

 !

45°

Parameter Test Conditions Min. Typ. Max. Unit

400

0.37
1

1.15
24
2

25
250
100

–100

620
200

75

19.1 33

15.8

6.7 19.9
30
35
55
35

3

12

1.4

700

6.2

Negligible

5

15

2N6800

LAB

SEME

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website http://www.semelab.co.uk

9/00

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 2A
VGS= 10V ID= 3A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 2A
VDS= 0.8xMax Rating
VGS= 0 TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz

VGS= 10V ID= 3A
VDS= Max Rating x 0.5

VDD= 200V VGS= 10V
ID= 3A RG= 7.5

W

IS= 3.0A TJ= 25°C
VGS= 0
I

F

= 3.0A TJ= 25°C

d

i

/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

amb

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain to Source
On–State Resistance
Gate Threshold Voltage
Forward Transconductance

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

2

Diode Forward Voltage
Reverse Recovery TimeReverse

Recovery Charge
Forward Turn–On Time

V

V/°C

W

V

S(

W

m

A

nA

pF

nC

ns

A

V

ns

m

C

nH

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

L

D

L

S

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Internal Drain Inductance

(from centre of drain pad to die)

Internal Source Inductance (from centre of source pad to end of source bond wire)

PACKAGE CHARACTERISTICS

(W)