Seme 2N6796 Datasheet
MECHANICAL DATA
Dimensions in mm (inches)
2N6796
PIN 1 – Source
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
0.89
max.
(0.035)
12.70
(0.500)
min.
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ .
2.54
(0.100)
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
123
45°
TO–39 METAL PACKAGE
Underside View
PIN 2 – Gate PIN 3 – Drain Case
TMOS FET TRANSIST OR
N – CHANNEL
FEATURES
•V
•I
•R
DSS
= 8A
D
DSON
= 100V
= 0.18
ΩΩ
ABSOLUTE MAXIMUM RATINGS (T
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
TJ, T
STG
THERMAL CHARACTERISTICS
R
θJC
R
θJC
T
L
Drain–Source Voltage
Drain–Gate Voltage (RGS= 1.0mΩ)
Gate–Source Voltage
Drain Current Continuous
Drain Current Pulsed
Total Device Dissipation @ TC= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Maximum Lead Temperature 1.5mm from Case for
10 s
= 25°C unless otherwise stated)
case
100V
100V
±20V
8.0A
32A
25W
0.2W/ °CW
–55 to +150°C
5.0°CW
175°CW
300°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N6796
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
r
DS(on)
V
DS(on)
gf
s
C
iss
C
oss
C
rss
t
on
t
off
t
r
t
f
V
SD
t
on
t
rr
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current,Forward
Gate–Body Leakage Current,Reverse
ON CHARACTERISTICS
Gate Thresshold Voltage
Static Drain–Source On–Resistance
Drain–Source On–Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Time
Turn–Off Time
RiseTime
FallTime
SOURCE DRAIN DIODE CHARACTERISTICS*
Diode Forward Voltage
Forward turn-On Time
Reverse Recovery Time
= 25°C unless otherwise stated)
A
VGS= 0 ID= 0.25mA
VDS=Rated V
DSS VGS
VDS= 80V VGS= 0
TJ= 125°C
VDS= 0 VGS= 20V
VDS= 0 VGS= –20V
VDS= V
GS
ID= 0.5mA
VGS= 10V ID= 5.0A
TA= 125°C
VGS= 10V ID= 8.0A
VGS= 15V ID= 5.0A
VDS= 25V VGS= 0
f = 1.0MH
Z
VDD= 30V ID= 5.0A
R
= 50 ohms
gen
IS= Rated I
D(on)
VGS= 0
= 0
100
250
1000
100
–100
2.0 4.0
0.18
0.35
1.56
3.0 9.0.
350 900
150 500
50 150
30
75
40
45
0.75 1.5
Negligible
300
V
µA
nA
V
Ω
V
mhos
pF
ns
V
ns
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
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