Seme 2N6782LCC4 Datasheet

2N6782LCC4

10/99

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E-mail: [e-mail]

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V

GS

Gate – Source Voltage

I

D

Continuous Drain Current (VGS= 10V , T

case

= 25°C)

I

D

Continuous Drain Current (VGS= 10V , T

case

= 100°C)

I

DM

Pulsed Drain Current

1

P

D

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

E

AS

Single Pulse Avalanche Energy

2

dv/dt Peak Diode Recovery

3

TJ, T

stg

Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).

±20V

3.1A

2.0A
12A

11W

0.09W/°C
68mJ

5.5V/ns

-55 to +150°C
300°C

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

FEATURES

• SURFACE MOUNT

• SMALL FOORPRINT

• HERMETICALLY SEALED

• DYNAMIC dv/dt RATING

• AVALANCHE ENERGY RATING

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

LCC4

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) @ VDD= 50V , L ³570mH , RG= 25W, Peak IL= 14A , Starting TJ= 25°C

3) @ ISD£

14A , di/dt £140A/ms , VDD£

BV

DSS

, TJ£

150°C , Suggested RG= 7.5

W

V

DSS

100V

I

D(cont)

3.1A

R

DS(on)

0.6

WW

WW

MOSFET TRANSISTOR PINS

GATE BASE 4,5

DRAIN COLLECTOR 1,2,15,16,17,18

SOURCE EMITTER 6,7,8,9,10,11,12,13

9.14 (0.360)

1.27 (0.050)

1.07 (0.040)

7.62 (0.300)

7.12 (0.280)

11
10

9
8

8.64 (0.340)

13

12

7

1.39 (0.055)

1.15 (0.045)

15

16

14

56

34

1.65 (0.065)

1.40 (0.055)

17
18

1
2

1.39 (0.055)

1.02 (0.040)

0.76 (0.030)

0.51 (0.020)

0.33 (0.013)

0.08 (0.003)

0.43 (0.017)

0.18 (0.007

Rad.

Rad.

≈2.16 (0.085)

Parameter Test Conditions Min. Typ. Max. Unit

V

V/°C

W

V

S (É)

m

A

nA

pF

nC

ns

A

V

ns

m

C

°C/W

THERMAL CHARACTERISTICS

2N6782LCC4

10/99

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

100

0.10

0.6

0.69

24

0.8
25

250
100

–100

180

82
15

4.1 6.5

0.4 1.6

1.4 3.5
15
25
25
20

3.1
12

1.5

180

2.0

Negligible

11
27

VGS= 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS= 10V ID= 2A
VGS= 10V ID= 3.1A
VDS= V

GS

ID= 250mA

VDS³

15V IDS= 2A

VGS= 0 VDS= 0.8BV

DSS

TJ= 125°C
VGS= 20V
VGS= –20V

VGS= 0
VDS= 25V
f = 1MHz
VGS= 10V
ID= 3.1A
VDS= 0.5BV

DSS

VDD= 50V
ID= 3.1A
R

G

= 7.5

W

IS= 3.1A TJ= 25°C
VGS= 0
IF= 7.4A TJ= 25°C
di/ dt£

100A/msVDD£

50V

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance

1

Gate Threshold Voltage
Forward Transconductance

1

Zero Gate Voltage Drain Current
Forward Gate

– Source Leakage

Reverse Gate

– Source Leakage

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current
Pulse Source Current

2

Diode Forward Voltage

1

Reverse Recovery Time
Reverse Recovery Charge

1

Forward Turn–On Time

BV

DSS

D

BV

DSS

D

T

J

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

R

q

JC

R

q

JPC

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms, d£2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board