Seme 2N6782 Datasheet

2N6782

6/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

DS

Drain Source Voltage

GR

Drain Gate Voltage (RGS= 1MW)

I

D

@Tcase

= 25°C Continuous Drain Current

I

D

@Tcase

= 100°C Continuous Drain Current

I

DM

Pulsed Drain Current

1

V

GS

Gate Source Voltage

PD@ T

case

= 25°C Maximum Power Dissipation

PD@ T

case

= 100°C Maximum Power Dissipation
Junction to Case Linear Derating Factor
Junction to ambient Linear Derating Factor
T

J

,

T

stg

Operating and Storage Temperature Range

Lead Temperature (1/16” from case for 10 secs)

100V
100V

±3.5V

±2.25A

±8V

±40V

15W

6W

0.12W/°C

0.005W/°C

-55 to +150°C
300°C

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

APPLICATIONS

• FAST SWITCHING

• MOTOR CONTROLS

• POWER SUPPLIES

TO39

0.89

(0.035)

max.

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

2.54

(0.100)

5.08 (0.200)
typ.

45˚

12.70

(0.500)

min.

4.19 (0.165)

4.95 (0.195)

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

7.75 (0.305)

8.51 (0.335)
dia.

1

2

3

Pin 1 - Source Pin 2 - Gate Pin 3 Drain and Case

Parameter Test Conditions Min. Typ. Max. Unit

V
V

nA

mA

A
V

W

V

S (É)

pF

ns

A
A
V

V

°C\W

THERMAL CHARACTERISTICS

2N6782

6/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

100*

2* 4.0*
1* 4.0*

100*
200*

-100*

0.25*
1*

3.5

2.1*

0.6*

1.08*

1.0* 3.0*
60* 200*
40* 100*
10* 25*

15*
25*
25*
20*

-3.5*

-8

-0.75* -1.5*

200

8.33*
170

VGS= 0 ID= 0.25mA
VDS= V

GS

ID= 0.5A
TA= 125°C

VGS= 20V ID= 0.5A

TA= 125°C
VGS= -20V
VDS= 0.8 Max. Ratings VGS=0
VDS= Max. Ratings VGS=0

TC= 125°C
VDS³

2V

DS(ON)VGS

= 10V
VGS= 10V ID= 3.5A
VGS=

10V

ID= 2.25A
TC= 125°C

VDS³

2V

DS(ON)IDS

= 2.25A

VGS= 0 VDS= 25V
f = 1MHz

VDD= 34V ID= 2.25A
RG= 25

W

RL= 15

W

(MOSFET switching times are essentially
independent of operating temperature.)

MOdified MOS POWER
symbol showing the intergal
P-N junction rectifier.

IS= -3.5A VGS= 0
TC= 25°C
IF =I

S

TJ= 150°C

di/ dt=

100A/ms

Free Air Operation

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Drain – Source Breakdown Voltage
Gate Threshold Voltage

Gate Body Leakage Forward
Gate Body Leakage Reverse

Zero Gate Voltage Drain Current

On State Drain Current1
Static Drain Source On-State
Voltage1
Static Drain Source On-State
Resistance1

Forward Transductance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time

Continuous Source Current Body
Diode
Source Current1 (Body Diode)

Diode Forward Voltage

1

Reverse Recovery Time

BV

DSS

V

GS(th)

I

GSSF

I

GSSR

I

DSS

I

D(on)

V

DS(on)

R

DS(on)

gfs
C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

R

q

JC

R

q

JPC

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width £300ms, d£2%
* JEDEC registered Values

DYNAMIC CHARACTERISTICS

BODY– DRAIN DIODE RATINGS & CHARACTERISTICS

Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board

,

5

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