Seme 2N5786 Datasheet
Prelim. 8/96
2N5786
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
V
CBO
Collector – Base Voltage
V
CER(sus)
Collector – Emitter Sustaining Voltage RBE= 100
W
V
CEO(sus)
Collector – Emitter Sustaining Voltage
V
EBO
Emitter – Base Voltage
I
C
Continuous Collector Current
I
B
Continuous Collector Current
P
D
Total Device Dissipation TA= 25°C
Derate above 25°C
P
D
Total Device Dissipation TC= 25°C
Derate above 25°C
TJ, T
STG
Operating Junction and Storage Temperature Range
T
L
Lead temperature,
³
1
/
32
” (0.8mm) from seating plane for 10 s max.
45V
45V
40V
3.5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
0.89
max.
(0.035)
12.70
(0.500)
min.
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
8.89 (0.35)
9.40 (0.37)
ty p .
2.54
(0.100)
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
123
45°
Prelim. 8/96
2N5786
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
m
A
mA
m
A
mA
m
A
m
A
—
V
V
—
—
m
s
°C/W
10
1
10
1
100
10
20 100
4
40
45
1.5
1
2
5 20
25
5
15
17.5
175
I
CER
Collector Cut-off Current
I
CEX
Collector Cut-off Current
I
CEO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE*
DC Current Gain
V
CEO(sus)*
Collector – Emitter Sustaining Voltage
1
V
CER(sus)*
Collector – Emitter Sustaining Voltage
1
V
BE
Base – Emitter Voltage
V
CE(sat)
Collector – Emitter Saturation Voltage
2
½
h
fe
½
Small Signal Common – Emitter
Current Gain
h
fe
Small Signal Common – Emitter
Current Gain
t
ON
Turn-on Time
t
OFF
Turn-off Time
R
q
JC
Thermal Resistance Junction – Case
R
q
JA
Thermal Resistance Junction – Ambient
VCE= 40V
RBE= 100
W
TC= 150°C
VCE= 45V VBE= -1.5V
RBE= 100
W
TC= 150°C
VCE= 25V IB= 0
VBE= -3.5V IC= 0
VCE= 2V IC= 1.6A
VCE= 2V IC= 3.2A
IC= 0.1A IB= 0
IC= 0.1A RBE= 100
W
VCE= 2V IC= 1.6A
IC= 1.6A IB= 0.16mA
IC= 3.2A IB= 0.8mA
VCE= -2V IC= 100mA
f = 200kHz
VCE= 2V IC= 0.1mA
f = 1kHz
VCC= 30V IC= 1A
IB1= I
B2
NOTES
* Pulse Test: tp= 300ms, d= 1.8%.
1) These tests
MUST NOT
be measured on a curve tracer.
2) Measured
1
/
4
” (6.35 mm) from case. Lead resistance is critical in this test.
3) Measured at a frequency where ½h
fe
½
is decreasing at approximately 6dB per octave.
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise stated)
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