Seme 2N5681SMD, 2N5681 Datasheet
DESCRIPTION
The 2N5681 and 2N5682 are silicon
expitaxial planar NPN transistors in
jedec TO-39 metal case intended for
use as drivers for high power transistors in general purpose, amplifier and
switching circuits
The complementary PNP types are the
2N5679 and 2N5680 respectively
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25°c unless otherwise stated
2N56822N5681
2N5681
2N5682
Prelim.3/00
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E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
NPN SILICON
TRANSISTORS
V
CBO
Collector – Base Voltage(IE= 0)
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IC= 0)
I
C
Continuous Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
case
£
25°C
T
amb
£
25°C
T
stg
Operating and Storage Temperature Range
T
j
Junction temperature
100V 120V
100V 120V
4V
1A
0.5A
10W
1W
–65 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
max.
12.70
(0.500)
min.
6.10 (0.240)
6.60 (0.260)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
ty p .
45°
!
TO-39
Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector
Parameter Test Conditions Min. Typ. Max. Unit
µA
µA
mA
µA
V
MHz
pF
R
thj-case
R
thj-amb
17.5
175
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
°C/W
°C/W
1
1
1
1
1
1
10
10
1
100
120
0.6
1
2
1
40 150
5
30
50
40
2N5681
2N5682
Prelim.3/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
I
CBO
I
CEV
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE*
h
FE*
f
T
C
CBO
h
fe
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Sustaining Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transistion Frequency
Collector Base Capacitance
Small Signal Current Gain
IE= 0
for 2N5681 VCB= 100V
for 2N5682 VCB= 120V
VBE= -1.5
for 2N5681 VCE= 100V
for 2N5682 VCE= 120V
T
case
= 150°C
for 2N5681 VCE= 100V
for 2n5682 VCE= 120V
IB= 0
for 2N5681 VCE= 70V
for 2N5682 VCE= 80V
IC= 0 VEB= 4V
IB= 0 IC= -10mA
for 2N5681
for 2N5682
IC= 250mA IB= 25mA
IC= 500mA IB= 50mA
IC= 1A IB= 200mA
IC= 250mA VCE= 2V
IC= 250mA VCE= 2V
IC= 1A VCE= 2V
IC= 100mA VCE= 10V
f = 10MHz
IE= 0 VCB= 20V
f = 1MHz
IC= 0.2A VCE= 1.5V
f = 1KHz
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
* Pulse test tp= 300ms , d< 2%
THERMAL DATA
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