Seme 2N5680, 2N5679 Datasheet

DESCRIPTION

The 2N5679 and 2N5680 are silicon
expitaxial planar PNP transistors in
jedec TO-39 metal case intended for
use as drivers for high power transis­tors in general purpose, amplifier and
switching circuit

The complementary NPN types are the
2N5681 and 2N5682 respectively

ABSOLUTE MAXIMUM RATINGS

T

CASE

= 25°c unless otherwise stated

2N56802N5679

2N5679
2N5680

LAB

SEME

Prelim. 3/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

PNP SILICON

TRANSISTORS

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage (IB= 0)

V

EBO

Emitter – Base Voltage (IC= 0)

I

C

Continuous Collector Current

I

B

Base Current

P

tot

Total Dissipation at T

case

£

25°C

T

amb

£

25°C

T

stg

Operating and Storage Temperature Range

T

j

Junction temperature

-100V -120V

-100V -120V

-4V

-1A

-0.5A
10W

1W

–65 to +200°C

200°C

MECHANICAL DATA

Dimensions in mm (inches)

0.89

(0.035)

max.

12.70

(0.500)

min.

6.10 (0.240)

6.60 (0.260)

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

7.75 (0.305)

8.51 (0.335)
dia.

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

2.54

(0.100)

5.08 (0.200)
ty p .

45°

 !

TO-39

Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector

Parameter Test Conditions Min. Typ. Max. Unit

µA

µA

mA

µA

V

MHz

pF

R

thj-case

R

thj-amb

17.5
175

Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max

°C/W
°C/W

-1

-1

-1

-1

-1

-1

-10

-10

-1

-100

-120

-0.6

-1

-2

-1

40 150

5

30

50

40

2N5679
2N5680

LAB

SEME

Prelim. 3/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

I

CBO

I

CEV

I

CEO

I

EBO

V

CEO(sus)*

V

CE(sat)*

V

BE*

h

FE*

f

T

C

CBO

h

fe

Collector Cut Off Current

Collector Cut Off Current

Collector Cut Off Current

Emitter Cut Off Current

Collector Emitter Sustaining Voltage

Collector Emitter Saturation Voltage

Base Emitter Voltage
DC Current Gain

Transistion Frequency

Collector Base Capacitance

Small Signal Current Gain

IE= 0

for 2N5679 VCB= -100V
for 2N5680 VCB= -120V

VBE= 1.5

for 2N5679 VCE= -100V
for 2N5680 VCE= -120V

T

case

= 150°C

for 2N5679 VCE= -100V
for 2n5680 VCE= -120V

IB= 0

for 2N5679 VCE= -70V
for 2N5680 VCE= -80V

IC= 0 VEB= -4V
IB= 0 IC= -10mA

for 2N5679
for 2N5680

IC= -250mA IB= -25mA
I

C

= -500mA IB= -50mA

I

C

= -1A IB= -200mA
IC= -250mA VCE= -2V
I

C

= -250mA VCE= -2V
I

C

= -1A VCE= -2V
IC= -100mA VCE= -10V
f = 10MHz
IE= 0 VCB= -20V
f = 1MHz
I

C

= -0.2A VCE= -1.5V
f = 1KHz

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

* Pulse test tp= 300ms , d< 2%

THERMAL DATA