Seme 2N5430 Datasheet
2N5430
MEDIUM POWER
NPN SILICON TRANSISTOR
Designed for switching and wide - band
amplifier applications
V
CEO
Collector – Emitter Voltage
V
CBO
Collector – Base Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current – Continuous
I
B
Base Current
P
D
Total Device Dissipation at T
case
= 25°C
Derate above 25°C
T
j
Operating and
T
stg
Storage Junction Temperature Range
R
q
JC
Thermal Resistance, Junction to Case.
100 V
100 V
6 V
7 A
1 A
40 W
228 mW / °C
–65 to 200°C
4.37 °C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO66 Package.
Pin 1 Base
Pin 2 Emitter
Case Collector
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
LAB
SEME
This product is available screened in
accordance with various military specs.
EG. 2N5430CECC–QR–B
Built and screened in accordance with
CECC procedures.
Screened to sequence B.
Prelim. 1/94
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
3.68
(0.145) rad.
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
max.
3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
1.27 (0.050)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.91 (0.750)
BV
CEO (sus)
* Collector – Emitter
Sustaining Voltage
I
CBO
Collector Cutoff Current
I
CEX
Collector Cutoff Current
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
100 V
100
m
A
10
m
A
1.0 mA
10
m
A
100
m
A
Min Max Unit
OFF CHARACTERISTICS
Parameter Test Conditions
IC= 50mA , IB= 0
VCE= 90V , IB= 0
VCE= 90V , V
EB(off)
= 1.5V
VCE= 90V , V
EB(off)
= 1.5V , TC= 150°C
VCB= Rated VCB, IE= 0
VBE= 6V , IC= 0
h
FE
*
DC Current Gain
Collector – Emitter
V
CE(sat)
*
Saturation Voltage
Base – Emitter
V
BE(sat)
*
Saturation Voltage
60
60 240
40
0.7
1.2
1.2
2.0
ON CHARACTERISTICS
—
V
V
IC= 500mA , VCE= 2V
IC= 2A , VCE= 2V
IC= 5A , VCE= 2V
IC= 2A , IB= 0.2A
IC= 7A , IB= 0.7A
IC= 2A , IB= 0.2A
IC= 7A , IB= 0.7A
Min Max UnitParameter Test Conditions
Current Gain
f
T
Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
30 MHz
250 pF
1000 pF
DYNAMIC CHARACTERISTICS
IC= 500 mA, VCE= 10V, f = 10 MHz
VCB= 10V, IE= 0, f = 100 kHz
VBE= 2V, IC= 0, f = 100 kHz
Parameter Test Conditions Min Max Unit
t
d
Delay Time VCC= 40V, V
EB(off)
= 3V
t
r
Rise Time IC= 2A, IB1= 200mA
t
s
Storage Time VCC= 40V, IC= 2A
t
f
Fall Time IB1= IB2= 200mA
100 ns
100 ns
2.0
m
s
200 ns
SWITCHING CHARACTERISTICS
Parameter Test Conditions Min Max Unit
* Pulse Test: Pulse width = 300 ms, Duty Cycle = 2.0 %
Prelim. 1/94
2N5430
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
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