Seme 2N5416CSM4, 2N5415CSM4 Datasheet

ABSOLUTE MAXIMUM RATINGS T

case

= 25°c unless otherwise stated

2N5415CSM4
2N5416CSM4

Prelim. 02/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

CBO

Collector – Base Voltage (IE=0)

V

CEO(sus)

Collector – Emitter Voltage (IB=0)

V

EBO

Emitter – Base Voltage (IC=0)

I

C

Collector Current

I

B

Base Current

P

tot

Total Device Dissipation atT

A

£

25°C

T

stg

Storage Temperature

T

J

Junction Temperature

R

th-j-amb

Thermal Resistance Junction - Ambient

1A

0.5A
1W

–65 to +200°C

175°C

150°C/W

MECHANICAL DATA

Dimensions in mm (inches)

1

23

4

5.59 ± 0.13

(0.22 ± 0.005)

0.23

(0.009)

rad.

1.02 ± 0.20

(0.04 ± 0.008)

2.03 ± 0.20

(0.08 ± 0.008)

1.40 ± 0.15

(0.055 ± 0.006)

0.25 ± 0.03

(0.01 ± 0.001)

0.23

(0.009)

min.

1.27 ± 0.05
(0.05 ± 0.002 )

3.81 ± 0.13
(0.15 ± 0.005)

0.64 ± 0.08
(0.025 ± 0.003)

PNP PLANAR EPITAXIAL TRANSIST OR

IN A HERMETICALLY SEALED CERAMIC

SURFA CE MOUNT PACKAGE FOR HIGH

RELIABILITY APPLICATIONS

FEATURES

• Silicon Planar PNP Transistor

• Hermetic Ceramic Surface Mount Package

• CECC Screening Options

• Space quality Options

LCC3 PACKAGE

Underside View

PAD 1 – Collector
PAD 2 – N/C

PAD 3 – Emitter
PAD 4 – Base

2N5415 2N5416

-200V

-200V

-4V

-350V

-300V

-6V

Parameter Test Conditions Min. Typ. Max. Unit

V

CB

= -175V 2N5415

V

CB

= -280V 2N5416
VCE= -150V
VEB= -4V 2N5415
VEB= -6V 2N5416
IC= -10mA 2N5415
IC= -10mA 2N5416
IC= -50mA RBE=50

W

2N5416

IC= -50mA IB=-5mA
IC= -50mA VCE= -10V
IC= -50mA VCE=-10V 2N5415
IC= -50mA VCE=-10V 2N5416
IC= -5mA VCE= -10V
f = 1KHz
IE= 0 VCB= -10V
f = 1MHz
IC= -10mA VCE= -10V
f = 5MHz

-50

-50

-50

-20

-20

-200

-300

-350

-0.5

-1.5
30 150
30 120

25

25

15

I

CBO

I

CEO

I

EBO

V

CEO(sus)*

V

CER(sus)*

V

CE(sat)

V

BE*

h

FE*

h

fe

C

cbo

f

T

m

A

m

A

m

A

V
V
V
V
V

—

—

pF

MHz

2N5415CSM4
2N5416CSM4

Prelim. 02/00

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Collector Cut Off Current (VE =0)
Emitter Cut Off Current (IB=0)
Emitter Cut Off Current (IC=0)

Collector Emitter on Voltage(IB=0)
Collector Emitter Breakdown Voltage

Collector Base Breakdown Voltage
Base-Emitter Voltage

DC Current Gain

Small Signal Current Gain

Collector-Base Capacitance

Transition Frequency

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

*Pulsed: duration = 300ms, duty cycle 1.5%