Seme 2N5323, 2N5322 Datasheet
2N5322
2N5323
Prelim. 7/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
R
thj-case
R
thj-amb
17.5
175
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
°C/W
°C/W
DESCRIPTION
The 2N5322 and 2n5323 are silicon planar
expitaxial PNP transistors in jedec TO-39
metal case intended for high voltage medium power applications in industrial and
commercial equipment.
The complementary NPN types are the
2N5320 and 2N5321 respectively
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25°c unless otherwise stated
2N53232N5322
HIGH SPEED
MEDIUM VOLTAGE
SWITCHES
V
CBO
Collector – Base Voltage (IE= 0)
V
CEV
Collector – Emitter Voltage (VBE= 1.5v)
V
CEO
Emitter – Base Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IC= 0)
I
C
Continuous Collector Current
I
B
Base Current
P
tot
Total Dissipation at T
amb
= 25°C
T
case
= 50°C
T
stg,Tj
Storage and Junction temperature
-2A
-1A
1W
10W
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
max.
12.70
(0.500)
min.
6.10 (0.240)
6.60 (0.260)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
ty p .
45°
123
TO-39
Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector
THERMAL DATA
-100V
-100V
-75V
-6V
-75V
-75V
-50V
-5V
Parameter Test Conditions Min. Typ. Max. Unit
µA
µA
V
pF
V
V
V
—
MHz
ns
-0.5
-5
-0.1
-0.5
-100
-75
-75
-50
-6
-5
-0.7
-1.2
-1.1
-1.4
30 130
10
40 250
50
100
1000
2N5322
2N5323
Prelim. 7/99
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
I
CBO
I
EBO
V
(BR)CEV
V
CEO(SUS)*
V
(BR)EBO
V
CE(sat)*
V
BE*
h
FE*
f
T
t
on
t
off
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Emitter Base Breakdown Voltage
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transistion Frequency
Turn-On Time
Turn Off Time
V
CB
= -80V IE= 0 2N5322
VCB= -60V IE= 0 2N5323
V
EB
= -5V IC= 0 2N5322
VEB= -4V IC= 0 2N5323
VBE= 1.5V IC= -0.1mA
2N5322
2N5323
IC= -10mA IB= 0
2N5322
2N5323
IE= -0.1mA IC= 0
2N5322
2N5323
IC= -500mA IB= -50mA
2N5322
2N5323
IC= -500mA V
CE
= -4V
2N5322
2N5323
IC= -500mA V
CE
= -4V
IC= -1A V
CE
= -2V
2N5322
IC= -500mA V
CE
= -4V
2N5323
IC= -50mA VCE= -4V
IC= -500mA VCC= -30V
IB1= -50mA
IC= -500mA VCC= -30V
IB1=-IB2= -50mA
ELECTRICAL CHARACTERISTICS FOR (T
case
= 25°C unless otherwise stated)
* Pulse test tp= 300ms , d= 1 %
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