Seme 2N5014 Datasheet

Parameter Test Conditions Min. Typ. Max. Unit

Prelim. 8/96

2N5014

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

SILICON EPITAXIAL

NPN TRANSISTOR

FEATURES

General purpose power transistor for switch­ing and linear applications in a hermetic
TO–39 package.

V

CBO

Collector – Base Voltage

V

CER

Collector – Emitter Voltage R = 10

W

V

EBO

Emitter – Base Reverse Voltage

I

C

Continuous Collector Current

P

TOT

Total Device Dissipation TC= 25°C

T

J

Maximum Operating Junction Temperature

T

STG

and Storage Temperature Range

900V
900V

5V

2W

3.5A

200°C

-55 to 200°C

MECHANICAL DATA

Dimensions in mm (inches)

TO–39 PACKAGE

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise stated)

PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise stated)

I

CBO

Collector Base Leakage Current
hFE D.C Current Gain
fae

V

CB

= 900V

VCE= 10V IC=0.02A

0.012

20 180

20

mA

—

MHz

6.10 (0.240)

6.60 (0.260)

12.70

(0.500)

min.

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

0.89
max.

(0.035)

7.75 (0.305)

8.51 (0.335)
dia.

45°

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

5.08 (0.200)
ty p .

123

2.54

(0.100)