Seme 2N4898X, 2N4900X, 2N4899X Datasheet

2N4898X
2N4899X
2N4900X

Prelim. 9/96

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

(BR)CBO

Collector – Base Breakdown Voltage

V

(BR)CEO

Collector – Emitter Breakdown Voltage

V

(BR)EBO

Emitter – Base Breakdown Voltage

I

C

Continuous Collector Current

I

B

Base Current

P

D

Total Power Dissipation

T

C

Operating Case Temperature Range

T

stg

Storage Temperature Range

R

θJC

Thermal Resistance , Junction To Case

2N4898X 2N4899X 2N4900X

–40V –60V –80V
–40V –60V –80V

–5V
–4A
–1A

25W
–65 to +200°C
–65 to +200°C

7.0°C/W

MECHANICAL DATA

Dimensions in mm (inches)

PNP EPITAXIAL BASE

MEDIUM POWER

TRANSISTOR

APPLICATIONS

Medium power, low frequency PNP
bipolar transistor in a hermetically
sealed TO–66 metal package.

TO–66 Metal Package.

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

24.33 (0.958)

24.43 (0.962)

3.68

(0.145) rad.

max.

14.48 (0.570)

14.99 (0.590)

3.61 (0.142)

3.86 (0.145)
rad.

0.71 (0.028)

0.86 (0.034)

4.83 (0.190)

5.33 (0.210)

9.14 (0.360)
min.

6.35 (0.250)

8.64 (0.340)

1.27 (0.050)

1.91 (0.750)

11.94 (0.470)

12.70 (0.500)

2N4898X
2N4899X
2N4900X

Prelim. 9/96

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Units

VCE= –30V IB=0
VCE=V

(BR)CEO

VBE= –1.5V
TC= 150°C

VCB=V

(BR)CBO

IE=0

VCE=V

(BR)CEO

VBE=0

IC= –1A IB= –0.1A
IC= –1A IB= –0.1A

IC= –1A VCE= –1V
VCE= –1V IC= –50mA
VCE= –1V IC= –500mA
VCE= –1V IC= –1A
VCE= –10V IC= –250mA
f=1MHz

I

CEO

Collector – Emitter Cut-off Current

I

CEX

Collector – Emitter Cut-off Current

I

CBO

Collector – Base Cut-off Current

I

CES

Collector – Emitter Leakage
Current

V

CE(sat)

* Collector – Emitter Saturation

Voltage

V

BE(sat)

* Base – Emitter Saturation Voltage

V

BE

* Base – Emitter Voltage

h

FE

* DC Current Gain

f

t

Transition Frequency

0.50
100

1.0

0.1

100

–0.60
–1.3V

–1.3V
40
20 130
10

3.0

mA

µA
mA
mA

µA

V
V

V

—

MHz

Electrical Characteristics (T

C

= 25°C unless otherwise stated.)

* Pulse Test: tp= 300µs, δ = 2%.