Seme 2N4393CSM Datasheet
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/94
2N4393CSM
LAB
SEME
SMALL SIGNAL
N–CHANNEL J–FET IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N4393 for high reliability /
space applications requiring small size
and low weight devices.
V
GD
Gate – Drain Voltage
V
GS
Gate – Source Voltage
I
G
Gate Current
P
D
Power Dissipation
Derate
T
j
Operating Junction Temperature Range
T
stg
Storage Temperature Range
–35V
–35V
50mA
350mW
2.8mW / °C
–55 to 150°C
–55 to 150°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC (CSM)
LCC1 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C unless otherwise stated)
PAD 1 – Source
Underside View
PAD 2 – Drain PAD 3 – Gate
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 5/94
2N4393CSM
LAB
SEME
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C unless otherwise stated)
VDS= 0V IG= –1µA
VDS= 15V ID= 10nA
VDS= 20V VGS= 0V
VGS= –5V
VDS= 0V T
amb
= 125°C
VDG= 10V VGS= –10V
VDS= 10V VGS= –10V
T
amb
= 125°C
VGS= 0V ID= 3mA
VGS= 0V ID= 1mA
VGS= 0V ID= 0mA
f = 1kHz
VDS= 20V VGS= 0V
f = 1MHz
VDS= 0V VGS= –5V
f = 1MHz
VDG= 10V ID= 10mA
f = 1kHz
V
(BR)GSS
Gate – Source Breakdown Voltage
V
GSS(off)
Gate – Source Cut–off Voltage
I
DSS*
Saturation Current
I
GSS
Gate Reverse Current
I
D(off)
Drain Cut–off Current
V
DS(on)
Drain – Source On Voltage
R
DS(on)
Drain – Source On Resistance
R
DS(on)
Drain – Source On Resistance
C
ISS
Common – Source Input Capacitance
Common – Source Reverse Transfer
C
RSS
Capacitance
_
e
n
Equivalent Input Noise Voltage
–35 –55
–0.5 –3
5
–5 –100
–3 –200
5 100
3 200
0.25 0.4
100
100
13 16
4 5
3.0
V
mA
pA
nA
pA
nA
V
Ω
Ω
pF
pF
nV
√Hz
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
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