Seme 2N4392 Datasheet

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim. 5/99

2N4392

JFET SWITCHING

N CHANNEL- DEPLETION

FEATURES

• LOW ON RESISTANCE

• FAST SWITCHING

• MILITARY OPTIONS AVAILABLE

APPLICATIONS:

• SWITCHING APPLICATIONS

V

DS

Drain–Source Voltage

V

DG

Drain–Gate Voltage

V

GS

Gate–Source Voltage

I

GF

Forward Gate Current

P

D

Total Device Dissipation @ TC= 25°C
Derate above 25°C

T

J

Operating Junction Temperature Range

T

STG

Storage Temperature Range

40V
40V
40V

50mA

1.8W

10mW/ °C
–65 to +175°C
–65 to +175°C

MECHANICAL DATA

Dimensions in mm (inches)

TO–18 METAL PACKAGE

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

PIN 1 – Source

Underside View

PIN 2 – Drain PIN 3 – Gate

(Gate is connected to case)

5.84 (0.230)

5.31 (0.209)

4.95 (0.195)

4.52 (0.178)

5.33 (0.210)

4.32 (0.170)

0.48 (0.019)

0.41 (0.016)
dia.

2.54 (0.100)
Nom.

13

2

min.

12.7 (0.500)

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

IG= 1.0mA VDS= 0
VGS= 20V VDS= 0
VGS= 20V VDS= 0

TA= 150°C
VDS= 20V ID= 1.0nA
IG= 1.0mA VDS= 0
VGS= 7V VDS= 20V
VGS= 7V VDS= 20V

TA= 150°C

VGS= 0V VDS= 20V
ID= 6mA VGS= 0
ID= 1.0mA VGS= 0

VGS= 0V VDS= 20V

f = 1.0MHz
VGS= 7V VDS= 0V

f = 1.0MHz

VGS= 0V ID= 0

f = 1.0kHz

I

D(on)

= 6mA

V

GS(on)

= 7V

I

D(on)

= 6mA

V

GS(off)

= 7V

40

0.1

0.2

-0.2 -5

1.0

0.1

0.2

25 75

0.4
60

14

3.5

60

15
35

5.0
20

OFF CHARACTERISTICS

Prelim. 5/99

2N4392

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

1) Pulse test : Pulse Width < 100ms ,Duty Cycle < 2%

2) f

t

is defined as the frequency at which |hfe| extrapolates to untity.

ON CHARACTERISTICS

SWITCHING CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

SMALL SIGNAL CHARACTERISTICS

V

nA

m

A

V
V

nA

m

A

mA

V

W

pF

W

ns

V

(BR)GSS

Gate Source Breakdown Voltage

1

I

GSS

Gate Reverse Current

V

GS

Gate Source Voltage

V

GS(f)

Gate Source Forward Voltage

I

D(off)

Drain Cut-off Current

I

DSS

Zero Gate voltage Drain Current

1

V

DS(on)

Drain Source On–Voltage

r

DS(on)

Static Drain Source On Resistance

C

iss

Input Capacitance

C

rss

Reverse Transfer Capacitance

r

ds(on)

Drain–Source “ON” Resistance

t

on

Turn–On Time

t

off

Turn–Off Time

t

r

RiseTime

t

f

FallTime