Seme 2N4033 Datasheet
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
12.70
(0.500)
min.
0.89
max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2N4033
HIGH SPEED
MEDIUM VOLTAGE
SWITCH
5.08 (0.200)
typ.
2.54
123
45˚
(0.100)
DESCRIPTION
The 2N4033 is a silicon expitaxial planar
PNP transistors in jedec TO-39 metal case
intended for use in switching applications.
TO-39
Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector
ABSOLUTE MAXIMUM RATINGS T
V
V
V
I
P
C
CEO
CBO
EBO
D
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Total Device Dissipation atTA= 25°C
case
Derate above 25°C
P
D
Total Device Dissipation atTC= 25°C
Derate above 25°C
T
stg
Operating and Storage Temperature Range
= 25°c unless otherwise stated
-80V
-80V
-5V
-1A
0.8W
4.56 mW/°C
4W
22.8mW/°C
–65 to +200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 1/99
THERMAL CHARATERISTICS
2N4033
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
h
FE
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
DC Current Gain
1
= 25°C unless otherwise stated)
case
V
= -60V TA= 150°C
CB
VEB= -5V
IC= -150mA IB= -15mA
1
IC= -500mA IB= -50mA
IC= -150mA IB= -15mA
IC= -500mA VCE= -0.5V
IC= -10mA
IC= -10µA
IE= -10µA
IC= -100mA VCE= -5.0V
@-55°C
IC= -100µAVCE= -5.0V
IC= -100mA VCE= -5.0V
IC= -500mA VCE= -5.0V
IC= -1.0A VCE= -5.0V
25
140
-50
-50
-10
-0.15
°C/W
°C/W
nA
µA
µA
V
0.50
-0.9
1
-1.1
-80
-80
-5.0
1
40
75
1
100 300
1
70
1
25
V
V
V
V
V
—
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
h
fe
Output Capacitance
Input Capacitance
Small Signal Gain
VCE= -10V f = 1MHz
VEB= -0.5V f = 1MHz
IC= -50mA VCE= -10V
1.5 5.0
f = 100MHz
SWITCHING CHARACTERISTICS
t
on
t
f
t
s
1
Pulse test tp= 300µs , δ = 1%
Turn On Time
IC= -500mA
Fall Time
IB1=-IB2= -50mA
Storage Time
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
20
110
100
50
350
Prelim. 1/99
pF
—
ns
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