Seme 2N3904-T18 Datasheet

2N3904

Prelim. 7/00

LAB

SEME

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

GENERAL PURPOSE

NPN TRANSIST OR

FOR HIGH RELIABILITY

APPLICATIONS

FEATURES

• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR

• CECC SCREENING OPTIONS

• HIGH SPEED SATURATED SWITCHING

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage

V

EBO

Emitter – Base Voltage

I

C

Collector Current

P

D

Total Device Dissipation @ TA=25°C
Derate above 25°C

R

q

JA

Thermal Resistance Junction – Ambient

T

STG

, T

J

Operating and Storage Temperature Range

60V
40V

6V

200mA

350mW

3.33mW / °C
300°C/W

–55 to +175°C

MECHANICAL DATA

Dimensions in mm (inches)

TO-18 METAL PACKAGE

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise stated)

PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector

13

2

2.54 (0.100)
Nom.

0.48 (0.019)

0.41 (0.016)
dia.

5.84 (0.230)

5.31 (0.209)

4.95 (0.195)

4.52 (0.178)

5.33 (0.210)

4.32 (0.170)

12.7 (0.500)

min.

2N3904

Prelim. 7/00

LAB

SEME

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

Parameter Test Conditions Min. Typ. Max. Unit

t

d

Delay Time

t

r

Rise Time

t

s

Storage Time

t

f

Fall Time

f

t

Current Gain Bandwidth Product

C

ob

Output Capacitance

C

ib

Input Capacitance

h

ie

Input Impedance

h

oe

Output Admittance

h

re

Voltage Feedback Ratio

h

fe

Small Signal Current Gain

N

F

Noise Figure

300

4

8

110
140

0.5 8

100 400

5

35
35

200

50

Parameter Test Conditions Min. Typ. Max. Unit

* Pulse Test: tp£

300ms, d£2%.

40
60

6

50
50

0.2

0.3

0.65 0.85

0.95
40
70

100 300

60
30

IC= 1mA IB= 0
IC= 10mAIE= 0
IE= 10mAIC= 0
VCE= 30V
VEB= 3V
IC= 10mA IB= 1mA
IC= 50mA IB= 5mA
IC= 10mA IB= 1mA
IC= 50mA IB= 5mA

IC= 0.1mA
IC= 1mA

VCE= 1V IC= 10mA

IC= 50mA
IC= 100mA

V

(BR)CEO*

Collector – Emitter Breakdown Voltage

V

(BR)CBO

Collector – Base Breakdown Voltage

V

(BR)EBO

Emitter – Base Breakdown Voltage

I

BL

Base Cut-off Current

I

CEX

Collector – Emitter Cut-off Current

V

CE(sat)

Collector – Emitter Saturation Voltage

V

BE(sat)*

Base – Emitter Saturation Voltage

h

FE*

DC Current Gain

V

nA

V

V

—

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

VCE= 20V IC= 10mA
f = 100MHz
VCB= 5V IE= 0
f = 1MHz
V

BE

= 0.5V IC= 0

f = 1MHz
V

CE

= 10V
IC= 1mA
f = 1kHz

V

CE

= 5V IC= 100mA
f = 1kHz R

S

= 1k

W

V

CC

= 3V VBE= 0.5V
I

C

= 10mA IB1= 1mA

V

CC

= 3V VBE= 0.5V
IB1= IB2= 1mA

MHz

pF

pF
k

W

m

hmos

x 10

-4

—

dB

ns

SMALL SIGNAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

SWITCHING CHARACTERISTICS (T

A

= 25°C unless otherwise stated)