Seme 2N3904CSM Datasheet
2N3904CSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/95
LAB
SEME
GENERAL PURPOSE
NPN TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N3904 for high reliability /
space applications requiring small size
and low weight devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ TA=25°C
Derate above 25°C
R
θJA
Thermal Resistance Junction – Ambient
T
STG
, T
J
Operating and Storage Temperature Range
60V
40V
6V
200mA
500mW
2.86mW / °C
350°C/W
–55 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
2N3904CSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/95
LAB
SEME
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
f
t
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
Input Impedance
h
oe
Output Admittance
h
re
Voltage Feedback Ratio
h
fe
Small Signal Current Gain
N
F
Noise Figure
300
4
8
110
140
0.5 8
100 400
5
35
35
200
50
Parameter Test Conditions Min. Typ. Max. Unit
* Pulse Test: tp≤ 300µs, δ≤2%.
40
60
6
50
0.2
0.3
0.65 0.85
0.95
40
70
100 300
60
30
IC= 1mA IB= 0
IC= 10µAIE= 0
IE= 10µAIC= 0
VCE= 30V VEB= 3V
IC= 10mA IB= 1mA
IC= 50mA IB= 5mA
IC= 10mA IB= 1mA
IC= 50mA IB= 5mA
IC= 0.1mA
IC= 1mA
VCE= 1V IC= 10mA
IC= 50mA
IC= 100mA
V
(BR)CEO*
Collector – Emitter Breakdown Voltage
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CEX
Collector – Emitter Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
V
nA
V
V
—
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
VCE= 20V IC= 10mA
f = 100MHz
VCB= 5V IE= 0
f = 1MHz
VBE= 0.5V IC= 0
f = 1MHz
VCE= 10V
IC= 1mA
f = 1kHz
VCE= 5V IC= 100µA
f = 1kHz RS= 1kΩ
VCC= 3V VBE= 0.5V
IC= 10mA IB1= 1mA
VCC= 3V VBE= 0.5V
IB1= IB2= 1mA
MHz
pF
pF
kΩ
µhmos
x 10
-4
—
dB
ns
SMALL SIGNAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
SWITCHING CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
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