Seme 2N3810DCSM Datasheet
LAB
SEME
2N3810DCSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/95
DUAL HIGH GAIN
PNP TRANSIST ORS IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• HERMETIC CERAMIC SURFACE
MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
APPLICATIONS:
Suitable for use in high gain, low noise
differential amplifier applications.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
1
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
Derate above 25°C
T
STG
Storage Temperature Range
–60V
–60V
–5V
–50mA
500mW 600mW
2.9mW / °C 3.4mW / °C
–65 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
LCC2 PACKAGE
Underside View
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C unless otherwise stated)
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
A
2
1
3
4
56
6.22 ± 0.13
(0.245 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
1.27 ± 0.13
(0.05 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
4.32 ± 0.13
(0.170 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
0.23
(0.009)
rad.
A =
NOTES
1. Base – Emitter Diode Open Circuited.
EACH SIDE TOTAL DEVICE
LAB
SEME
2N3810DCSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/95
Parameter Test Conditions
1
Min. Typ. Max. Unit
V
nA
µA
nA
—
V
V
kΩ
—
µmho
—
pF
–60
–60
–5
–10
–10
–20
100
150 450
75
150 450
150 450
125
–0.7
–0.7
–0.8
–0.2
–0.25
330
150 600
25 x 10
-4
560
1
15
4
8
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)CEO*
Collector – Emitter Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
BE
Base – Emitter Voltage
V
CE(sat)
Collector – Emitter Saturation Voltage
h
ie
Small Signal Common – Emitter
Input Impedance
h
fe
Small Signal Common – Emitter
Current Gain
h
re
Small Signal Common – Emitter
Reverse Voltage Gain
h
oe
Small Signal Common – Emitter
Output Admittance
|hfe| Small Signal Common – Emitter
Current Gain
C
obo
Common – Base Open Circuit
Output Capacitance
C
ibo
Common – Base Open Circuit
Input Capacitance
IC= –10µAIE= 0
IC= –10mA IB= 0
IE= –10µAIC= 0
VCB= –50V IE= 0
TA= 150°C
VEB= –4V IC= 0
IC= –10µAVCE= –5V
IC= –100µAVCE= –5V
TA= –55°C
IC= –500µAVCE= –5V
IC= –1mA VCE= –5V
IC= –10mA VCE= –5V *
IC= –100µAVCE= –5V
IB= –10µAIC= –100µA
IB= –100µAIC= –1mA
IB= –10µAIC= –100µA
IB= –100µAIC= –1mA
VCE= –10V
IC= –1mA
f = 1kHz
VCE= –5V IC= –500µA
f = 30MHz
VCE= –5V IC= –1mA
f = 100MHz
VCB= –5V IE= 0
f = 100kHz
VEB= –0.5V IC= 0
f = 100kHz
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C unless otherwise stated)
NOTES
* Pulse Test: tp= 300µs, δ≤2%.
1) Terminals not under test are open circuited under all test conditions.
INDIVIDUAL TRANSISTOR CHARACTERISTICS
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