Seme 2N3799X Datasheet
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 7/96
LAB
SEME
2N3799X
PNP, LO W NOISE
AMPLIFIER
TRANSIST OR
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• CECC SCREENING OPTIONS
• LOW NOISE AMPLIFIER
APPLICATIONS:
• Low Level Amplifier
• Instrumentation Amplifiers
• General Purpose
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IB= 0)
I
C
Collector Current
P
D
Total Device Dissipation @ TA= 25°C
Derate above 25°C
P
D
Total Device Dissipation @ TC= 25°C
Derate above 25°C
TJ, T
STG
Operating and Storage Junction Temperature Range
R
q
JA
Thermal Resistance Junction to Ambient
R
q
JC
Thermal Resistance Junction to Case
–60V
–50V
–5V
–50mA
360mW
2.06mW / °C
1.2W
6.86mW / °C
–65 to +200°C
0.49°C/mW
0.15°C/mW
MECHANICAL DATA
Dimensions in mm (inches)
TO–18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base PIN 3 – Collector
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.33 (0.210)
4.32 (0.170)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
13
2
min.
12.7 (0.500)
Prelim. 7/96
LAB
SEME
2N3799X
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
f
t
Current Gain Bandwidth
Product
1
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
Input Impedance
h
oe
Output Admittance
h
re
Voltage Feedback Ratio
h
fe
Small Signal Current Gain
N
F
Noise Figure
30
100 500
4
8
10 40
560
25
300 900
2.5 4
0.8 1.5
1.8 1.5
1.5 2.5
VCE= –5V IC= –500mA f = 20MHz
V
CE
= –5V IC= –1mA f = 100MHz
V
CB
= –5V IE= 0 f = 1MHz
VEB= –0.5V IC= 0 f = 1MHz
VCE= –10V
I
C
= –1mA
f = 1kHz
f = 100Hz B.W. = 20Hz
f = 1kHz
Spot:
B.W. = 200Hz
f = 10kHz
Noise:
B.W. = 2kHz
f = 1kHz
V
CE
= –10V
IC= –100mA
RG= 3k
W
MHz
pF
k
W
m
hmos
x 10
-4
—
dB
SMALL SIGNAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
–60
–50
–5
–0.01
–10
–20
–0.2
–0.25
–0.7
–0.8
–0.7
75
225
300
150
300
300
250
IC= –10mA IB= 0
IC= –10mAIE= 0
IE= –10mAIC= 0
VCB= –50V
IE= 0 TA= 150°C
VEB= –4V IC= 0
IC= –100mAIB= –10mA
IC= –1mA IB= –100mA
IC= –100mAIB= –10mA
IC= –1mA IB= –100mA
IC= –100mAVCE= –5V
IC= –1mA
IC= –10mA
IC= –100mA
IC= –100mATA= –55°C
IC= –500mA
IC= –1mA
IC= –10mA *
V
(BR)CEO
Collector – Emitter Breakdown Voltage
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
V
BE(on)
Base – Emitter On Voltage
h
FE
DC Current Gain (VCE= –5V)
V
m
A
nA
V
V
V
—
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
* Pulse Test: tp£
300ms, d£2%.
1) ftis defined as the frequency at which |hfe| extrapolates to untity.
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