Seme 2N3799 Datasheet

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim. 4/95

LAB

SEME

2N3799

PNP, LOW NOISE

AMPLIFIER

TRANSISTOR

FEATURES

• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR

• CECC SCREENING OPTIONS

• LOW NOISE AMPLIFIER

APPLICATIONS:

• Low Level Amplifier

• Instrumentation Amplifiers

• General Purpose

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage (IB= 0)

V

EBO

Emitter – Base Voltage (IB= 0)

I

C

Collector Current

P

D

Total Device Dissipation @ TA= 25°C
Derate above 25°C

P

D

Total Device Dissipation @ TC= 25°C
Derate above 25°C

T

J

, T

STG

Operating and Storage Junction Temperature Range

R

q

JA

Thermal Resistance Junction to Ambient

R

q

JC

Thermal Resistance Junction to Case

–60V
–60V

–5V

–50mA

360mW

2.06mW / °C

1.2W

6.86mW / °C

–65 to +200°C

0.49°C/mW

0.15°C/mW

MECHANICAL DATA

Dimensions in mm (inches)

TO–18 METAL PACKAGE

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

PIN 1 – Emitter

Underside View

PIN 2 – Base PIN 3 – Collector

5.84 (0.230)

5.31 (0.209)

4.95 (0.195)

4.52 (0.178)

0.48 (0.019)

0.41 (0.016)

5.33 (0.210)

4.32 (0.170)

min.

dia.

2.54 (0.100)
Nom.

13

2

12.7 (0.500)

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Prelim. 4/95

LAB

SEME

2N3799

Parameter Test Conditions Min. Typ. Max. Unit

f

t

Current Gain Bandwidth

Product

1

C

ob

Output Capacitance

C

ib

Input Capacitance

h

ie

Input Impedance

h

oe

Output Admittance

h

re

Voltage Feedback Ratio

h

fe

Small Signal Current Gain

N

F

Noise Figure

30

100 500

4

8

10 40

560

25

300 900

2.5 4

0.8 1.5

1.8 1.5

1.5 2.5

VCE= –5V IC= –500mA f = 20MHz

VCE= –5V IC= –1mA f = 100MHz

V

CB

= –5V IE= 0 f = 1MHz

V

EB

= –0.5V IC= 0 f = 1MHz

VCE= –10V

IC= –1mA

f = 1kHz

f = 100Hz B.W. = 20Hz

f = 1kHz

Spot:

B.W. = 200Hz

f = 10kHz

Noise:

B.W. = 2kHz

f = 1kHz

V

CE

= –10V

IC= –100mA

RG= 3k

W

MHz

pF

k

W

m

hmos

x 10

-4

—

dB

SMALL SIGNAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

Parameter Test Conditions Min. Typ. Max. Unit

–60

–60

–5

–0.01

–10

–20

–0.2

–0.25

–0.7

–0.8

–0.7

75

225

300

150

300

300

250

IC= –10mA IB= 0

IC= –10mAIE= 0

IE= –10mAIC= 0

VCB= –50V

IE= 0 TA= 150°C

VEB= –4V IC= 0

IC= –100mAIB= –10mA

IC= –1mA IB= –100mA

IC= –100mAIB= –10mA

IC= –1mA IB= –100mA

IC= –100mAVCE= –5V

IC= –1mA

IC= –10mA

IC= –100mA

IC= –100mATA= –55°C

IC= –500mA

IC= –1mA

IC= –10mA *

V

(BR)CEO

Collector – Emitter Breakdown Voltage

V

(BR)CBO

Collector – Base Breakdown Voltage

V

(BR)EBO

Emitter – Base Breakdown Voltage

I

CBO

Collector Cut-off Current

I

EBO

Emitter Cut-off Current

V

CE(sat)

Collector – Emitter Saturation Voltage

V

BE(sat)

Base – Emitter Saturation Voltage

V

BE(on)

Base – Emitter On Voltage

h

FE

DC Current Gain (VCE= –5V)

V

m

A

nA

V

V

V

—

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

* Pulse Test: tp£

300ms, d£2%.

1) ftis defined as the frequency at which |hfe| extrapolates to untity.