Seme 2N3792 Datasheet

80V
80V

7V

10A

4A

150W

65 to 200°C

200°C

06/00

2N3792

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E-mail: [e-mail]

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V

CBO

Collector – Base Voltage(IE= 0)

V

CEO(sus)

Collector – Emitter Voltage (IB = 0)

V

EBO

Emitter – Base Voltage(IC= 0)

I

C

Collector Current

I

B

Base Current

P

TOT

Total Power Dissipation at T

case

= 25°C

T

stg

, Storage Temperature

T

j

,

Junction Temperature

PNP SILICON EPITAXIAL BASE

POWER TANSISTORS

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

PIN 1 — Base PIN 2 — Emitter Case is Collector.

APPLICATIONS

Linear Power and Switching Applications

MECHANICAL DATA

Dimensions in mm(inches)

TO3

THERMAL CHARACTERISTICS

RqJC Thermal Resistance, Junction to Case 1.17 °C/W

11.18 (0.440)

10.67 (0.420)

1.09 (0.043)

0.97 (0.038)
Dia.

40.01 (1.575)
Max.

22.23 (0.875)
Max.

30.40 (1.197)

29.90 (1.177)

2

1

16.97 (0.668)

16.87 (0.664)

(1.050)

1.63 (0.064)

1.52 (0.060)

4.09 (0.161)

3.84 (0.151)

26.67

Max.

4.47 (0.176)
Rad.

2 Pls.

11.43 (0.450)

6.35 (0.250)

12.19 (0.48)

11.18 (0.44)

2 Pls

Parameter Test Conditions Min. Typ. Max. Unit

V

V
mA
mA

—

MHz

-80

-1

1.8
4

-5

-1

-5
50 150
30 120

5
4

V

CEO(sus)*

V

CE(sat)*

V

BE(on)*

I

EBO

I

CEX

h

FE*

f

t

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

2N3792

06/00

IC= 200mA IB= 0

IC= 5A IB = 0.5V
IC= 5A VCC= 2V

IC= 10A VCC= 4V
IC= 0 VEB=7V
VBE= 1.5V VCE= 80

Tc= 150°C
IC= 1A VCE= 2V
IC= 3A VCE= 2V
IC= 10A VCE= 4V
IC= 0.5A VCE= 10V
f =1.MHz

Collector - Emitter Sustaining
Voltage
Collector - Emitter Saturation
Voltage

Base Emitter Voltage
Emmiter Cut-off Current
Collector Cut-off Current

DC Current Gain

Transition Frequency

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

* Pulsed duration = 300 ms, duty cycle = 1.5%