Seme 2N3700DCSM Datasheet
2N3700DCSM
LAB
SEME
Semelab plc. Telephone (01455) 556565.Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
HIGH VOL T AGE, MEDIUM PO WER, NPN
DUAL TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH VOLTAGE
APPLICATIONS:
Dual Hermetically sealed surface mount version of the popular 2N3700 for high reliability/
space applications requiring small size and
low weight devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IB= 0)
I
C
Collector Current
P
D
Per Device Dissipation
P
D
Total Device Dissipation
P
D
Derate above 25°C (Per Device)
(Total)
R
ja
Thermal Resistance Junction to Ambient
T
stg
Storage Temperature
140V
80V
7V
1A
350mW
525mW
2mW / °C
3mW/°C
240°C/W
–65 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
A
2
1
3
4
56
6.22 ± 0.13
(0.245 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
1.27 ± 0.13
(0.05 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
4.32 ± 0.13
(0.170 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
0.23
(0.009)
rad.
A =
2N3700
Parameter Test Conditions Min. Typ. Max. Unit
V
nA
µA
nA
V
V
V
-
-
-
-
-
-
V
V
80
10
10
10
0.2
0.5
1.1
50
90
100 300
50
15
140
7
IC=10mA
VCB= 90V
VCB= 90V T
amb
= 150°C
VEB= 5V
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 0.1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 150mA VCE= 10V
IC= 500mA VCE= 10V
IC= 1A VCE= 10V
IC= 150mA VCE= 10V
IC= 100µA
IE= 100µA
V
CEO(sus)*
Collector – Emitter Sustaining Voltage
(IB= 0)
I
CBO*
Collector – Base Cut-off Current
(IE= 0)
I
EBO*
Emitter Cut-off Current (IC= 0)
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain (VCE= 10V)
V
(BR)CBO
Collector-base Breakdown Voltage
(IE= 0)
V
(BR)EBO
Emitter-base BreakdownVoltage
(IC= 0)
2N3700DCSM
LAB
SEME
Semelab plc. Telephone (01455) 556565.Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (per Device) (T
case
= 25°C unless otherwise stated)
f
T
Transition Frequency
h
fe
Small Signal Current Gain
C
EBO
Emitter-base Capacitance
C
CBO
Collector-base Capacitance
rbb’Cb’c
Feedback time constant
IC= 50mA VCE= 10V f = 20MHz
IC= 1mA VCE= 5V f = 1kHz
IC= 0 VEB= 0.5V f = 1MHz
IC= 0 VCB= 10V f = 1MHz
IC= 10mA VCB= 10V f = 4MHz
100 200
80 400
60
12
25 400
MHz
pF
pF
ps
* Pulse test tp = 300µs , δ ≤ 1%
DYNAMIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
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