Seme 2N3637CSM Datasheet
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 2/00
2N3637CSM
PNP SILICON TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURF A CE MOUNT PA CKA GE FOR
HIGH RELIABILITY APPLICATIONS
FEATURES
• High Voltage Switching
• Low Power Amplifier Applications
• Hermetic Ceramic Surface Mount
Package
APPLICATIONS:
• CECC Screening Options
• Space Quality Levels Options.
V
CEO
Collector – Emitter Voltage
V
CBO
Collector – Base Voltage
V
EBO
Emmiter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ TA= 25°C
TJ, T
STG
Operating and Storage Junction Temperature Range
175V
175V
5V
1A
500mW
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
LCC1
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Parameter Test Conditions Min. Typ. Max. Unit
175
175
5.0
50
100
80
90
100
100 300
50
0.3
0.5
0.8
.65 0.9
200
10
75
200 1200
3.0
80 320
200
3.0
400
600
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
BV
CEO
Collector–Emitter Breakdown Voltage
1
BV
CBO
Collector – Base Breakdown Voltage
BV
EBO
Emitter – Base Breakdown Voltage
I
EBO
Emitter Cut-off Current
I
CBO
Collector Cut-off Current
h
FE
DC Current Gain
V
CE(sat)
Collector – Emitter Saturation Voltage
1
V
BE(sat)
Base – Emitter Saturation Voltage
f
t
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
Input Impedance
h
re
Voltage Feedback Ratio
h
fe
Small Siganl Current Gain
h
oe
Ourput Admittance
NF
t
on
Turn–On Time
t
off
Turn–Off Time
I
C
= 10mA IB= 0
IC= 100mAIE= 0
IC= 0 IE= 10mA0
VBE= 3.0V IC= 0
VCB= 100V IE= 0
IC= 0.1mA VCE= 10V
IC= 1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 50mA VCE= 10V
IC= 150mA VCE= 10V
IC= 10mA IB= 1mA
IC= 50mA IB= 5mA
IC= 10mA IB= 1mA
IC= 50mA IB= 5mA
VCE= 20V IC= 50mA
f = 100MHz
V
CB
= 20V IE= 0
f = 100kHz
V
BE
= 1.0V IC= 0
f = 100kHz
VCE= 10V IC= 10mA
f = 1kHz
VCE= 10V IC= 0.5mA
R
S
= 1.0
W
f = 1kHz
V
CC
= 100V VBE= 4.0V
I
C
= 50mA IB1= IB2=5mA
V
nA
-
V
V
MHz
pF
pF
W
x10
-4
—
m
mhos
dB
ns
OFF CHARACTERISTICS
Prelim. 2/00
2N3637CSM
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300ms ,Duty Cycle < 2%
ON CHARACTERISTICS
SWITCHING CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
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