Seme 2N3501CSM4 Datasheet
MECHANICAL DATA
Dimensions in mm (inches)
2N3501CSM4
HIGH V OLTA GE, MEDIUM PO WER, NPN
TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PA CKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
0.64 ± 0.08
(0.025 ± 0.003)
3.81 ± 0.13
(0.15 ± 0.005)
4
1.02 ± 0.20
(0.04 ± 0.008)
PAD 1 – Collector
PAD 2 – N/C
5.59 ± 0.13
(0.22 ± 0.005)
0.23
(0.009)
23
1
2.03 ± 0.20
(0.08 ± 0.008)
1.27 ± 0.05
LCC3 PACKAGE
Underside View
PAD 3 – Emitter
PAD 4 – Base
(0.01 ± 0.001)
rad.
(0.05 ± 0.002)
0.25 ± 0.03
1.40 ± 0.15
(0.055 ± 0.006)
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS
0.23
min.
(0.009)
• SPACE QUALITY LEVELS OPTIONS
• HIGH VOLTAGE
APPLICATIONS:
Hermetically sealed surface mount version of
the popular 2N3501 for high reliability / space
applications requiring small size and low
weight devices.
ABSOLUTE MAXIMUM RATINGS (T
V
V
V
I
P
P
T
R
C
CBO
CEO
EBO
D
D
stg
ja
Collector – Base Voltage
Collector – Emitter Voltage (IB= 0)
Emitter – Base Voltage (IB= 0)
Collector Current
Total Device Dissipation TA= 25 °C
Derate above 25°C
Storage Temperature
Thermal Resistance Junction to Ambient
= 25°C unless otherwise stated)
case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
150V
150V
6V
300mA
500mW
2.85mW / °C
–65 to 200°C
350°C/W
Prelim. 12/98
2N3501CSM4
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current-Gain–Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
= 25°C unless otherwise stated)
A
1
IC = 10mA IB= 0
IC = 10µAIE= 0
IE= 10µAIC= 0
VCB= 75V IE= 0
VCB= 75V IE= 0
TA= 150°C
V
EB(off)
= 4V IC= 0
IC= 0.1mA VCE= 10V
IC= 1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 150mA VCE= 10V
IC= 300mA VCE= 10V
IC = 10mA IB= 1mA
1
IC = 50mA IB= 5mA
IC = 150mA IB= 15mA
IC = 10mA IB= 1mA
1
IC = 50mA IB= 5mA
IC = 150mA IB= 15mA
2
VCE= 20V IC= 20mA
f = 100MH
VCB= 10V IE= 0
f = 1MH
VEB= 0.5V IC= 0
f = 1MH
VCE= 10V IC= 10mA
f = 1KH
VCE= 10V IC= 10mA
f = 1KH
VCE= 10V IC= 10mA
f = 1KH
VCE= 10V IC= 10mA
f = 1KH
150
150
V
6
0.05
µA
50
nA
35
50
1
1
1
75
100 300
20
—
0.2
0.25
V
0.4
0.8
0.9
V
1.2
150
Z
MH
Z
8
Z
pF
80
Z
0.25 1.25
Z
4
Z
375
Z
200
Z
x10
—
Ω
-4
Ω
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 12/98
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