Seme 2N3439CSM4R Datasheet

2N3439CSM4R
2N3440CSM4R

Prelim. 11/98

Semelab plc. Telephone [phone]. Fax [phone]. e-mail [e-mail]

Website http://www.semelab.co.uk

HIGH V OLTA GE, MEDIUM PO WER, NPN

TRANSIST OR IN A

HERMETICALLY SEALED

CERAMIC SURFACE MOUNT PA CKA GE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

• Hermetic Ceramic 4 pin Surface Mount
Package - LCC3

• High Voltage Small Signal Type

• Full Screening Options Available

• “R” Denotes Reverse Pinning

APPLICATIONS:

The 2N3439CSM4 and 2N3440CSM4 are high
voltage silicon epitaxial planar transistors mounted
in the popular 4 pin ceramic surface mount
hermetically sealed package. These products are
specifically intended for use in High reliability
systems and can be ordered with a full range of
screening options from standard Military
(equivalent to CECC Full Assessment Level)
through all options up to full space flight level.

V

CBO

Collector – Base Voltage (IE= 0)

V

CEO

Collector – Emitter Voltage (IB= 0)

V

EBO

Emitter – Base Voltage (IB= 0)

I

C

Collector Current.

I

B

Base Current.

P

tot

Total Power Dissipation at T

amb

= 25°C with product

mounted on a suitable PCB to provide a heat path.

T

stg

Storage Temperature.

T

j

Maximum Junction Temperature.

450V
350V

7V
1A

0.5A

0.5W

300V
250V

7V
1A

0.5A

0.5W

MECHANICAL DATA

Dimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS

LCC3 PACKAGE

Underside View

PAD 1 – Collector
PAD 2 – Emitter

PAD 3 – N/C
PAD 4 – Base

2N3439CSM4 2N3440CSM4

–65 to +200°C

+200°C

0.64 ± 0.08
(0.025 ± 0.003)

3.81 ± 0.13
(0.15 ± 0.005)

4

1.02 ± 0.20

(0.04 ± 0.008)

5.59 ± 0.13

(0.22 ± 0.005)

23

1

2.03 ± 0.20

(0.08 ± 0.008)

1.40 ± 0.15

(0.055 ± 0.006)

0.25 ± 0.03

(0.01 ± 0.001)

0.23

rad.

(0.009)

1.27 ± 0.05
(0.05 ± 0.002)

0.23

(0.009)

min.

Parameter Test Conditions Min. Typ. Max. Unit

350
250

500
500

20
20
20
50
20

0.5

1.3

40

30

2N3439CSM4R
2N3440CSM4R

Prelim. 11/98

Semelab plc. Telephone [phone]. Fax [phone]. e-mail [e-mail]

Website http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

2N3439CSM4R
2N3440CSM4R
2N3439CSM4R

2N3440CSM4R
VCB= 360V 2N3439CSM4R
VCB= 250V 2N3440CSM4R
VCE= 300V 2N3439CSM4R
VCE= 200V 2N3440CSM4R
VEB= 6V
IC= 50mA IB= 4mA
IC= 50mA IB= 4mA
IC= 20mA VCE= 10V
2N3439CSM4R only
IC= 20mA VCE= 10V

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

V

CEO(sus)*

Collector – Emitter Sustaining Voltage
(IB= 0)

I

CEX*

Collector Cut-off Current
(VBE= –1.5V)

I

CBO*

Collector – Base Cut-off Current
(IE= 0)

I

CEO*

Collector – Cut-off Current
(IB= 0)

I

EBO*

Emitter Cut-off Current (IC= 0)

V

CE(sat)*

Collector – Emitter Saturation Voltage

V

BE(sat)*

Base – Emitter Saturation Voltage

h

FE*

DC Current Gain

V

m

A

m

A

m

A

m

A

V

—

f

T

Transition Frequency

C

ob

Output Capacitance

h

fe

Small Signal Current Gain

IC= 10mA VCE= 10V f = 5MHz
VCB= 10V f = 10MHz

IC= 5mA VCE= 10V f = 1kHz

15

10

25

MHz

pF

* Pulse test tp = 300ms ,

d £

2%

DYNAMIC CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

IC= 50mA