Seme 2N3439CSM4 Datasheet

2N3439CSM4

LAB

SEME

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

Prelim. 2/98

HIGH V OLT AGE, MEDIUM PO WER, NPN

TRANSIST OR IN A

HERMETICALLY SEALED

CERAMIC SURFA CE MOUNT PACKA GE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR

• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE

• CECC SCREENING OPTIONS

• SPACE QUALITY LEVELS OPTIONS

• HIGH VOLTAGE

APPLICATIONS:

Hermetically sealed surface mount version of
the popular 2N3439 for high reliability / space
applications requiring small size and low
weight devices.

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage (IB= 0)

V

EBO

Emitter – Base Voltage (IB= 0)

I

C

Collector Current

P

D

Total Device Dissipation

P

D

Derate above 50°C

R

ja

Thermal Resistance Junction to Ambient

T

stg

Storage Temperature

450V
350V

7V

500mA

350mW

2.0mW / °C
350°C/W

–55 to 200°C

MECHANICAL DATA

Dimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

LCC3 PACKAGE

Underside View

PAD 1 – Collector
PAD 2 – N/C

PAD 3 – Emitter
PAD 4 – Base

1

23

4

5.59 ± 0.13

(0.22 ± 0.005)

0.23

(0.009)

rad.

1.02 ± 0.20

(0.04 ± 0.008)

2.03 ± 0.20

(0.08 ± 0.008)

1.40 ± 0.15

(0.055 ± 0.006)

0.25 ± 0.03

(0.01 ± 0.001)

0.23

(0.009)

min.

1.27 ± 0.05
(0.05 ± 0.002 )

3.81 ± 0.13
(0.15 ± 0.005)

0.64 ± 0.08
(0.025 ± 0.003)

2N3439CSM4

LAB

SEME

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

Prelim. 2/98

Parameter Test Conditions Min. Typ. Max. Unit

Parameter Test Conditions Min. Typ. Max. Unit

IC= 50mA

IB= 0 VCE= 450V
IE= 0 VCB= 300V
TC= 125°C
IC= 0 VEB= 6V (off)

IC= 50mA IB= 4mA

IC= 50mA IB= 4mA
IC= 20mA IC= 10mA

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

V

CEO(sus)*

Collector – Emitter Sustaining Voltage

I

CEX*

Collector Cut-off Current (IC= 0)

I

CBO*

Collector – Base Cut-off Current

I

EBO*

Emitter Cut-off Current (IC= 0)

V

CE(sat)*

Collector – Emitter Saturation Voltage

V

BE(sat)*

Base – Emitter Saturation Voltage

h

FE*

DC Current Gain

350

500

20
10
20

0.5

1.3

40 160

V

µA
µA
µA
µA

V

—

f

T

Transition Frequency

C

ob

Output Capacitance

h

fe

Small Signal Current Gain

IC= 10mA VCE= 10V f = 5MHz
VCB= 10V IE= 0 f = 1.0MHz

IC= 5mA VCE= 10V f = 1kHz

15

10

25

MHz

pF

* Pulse test tp = 300µs , δ ≤ 2%

DYNAMIC CHARACTERISTICS (T

case

= 25°C unless otherwise stated)