Seme 2N3209DCSM Datasheet
Prelim. 2/00
LAB
SEME
2N3209DCSM
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
DU AL HIGH SPEED , MEDIUM PO WER
PNP GENERAL PURPOSE TRANSIST OR
IN A HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FEATURES
• SILICON PLANAR EPITAXIAL DUAL PNP
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS AVAILABLE
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
For high reliablitity general purpose
applications requiring small size and low
weight devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Device Dissipation
P
D
Derate above 50°C
R
ja
Thermal Resistance Junction to Ambient
T
j
Max Junction Temperature
T
stg
Storage Temperature
–20V
–20V
–4V
–200mA
300mW
2mW / °C
420°C / W
500mW
3.3mW / °C
250°C / W
MECHANICAL DATA
Dimensions in mm (inches)
LCC2 PACKAGE
Underside View
ABSOLUTE MAXIMUM RATINGS(T
case
= 25°C unless otherwise stated)
A
2
1
3
4
56
6.22 ± 0.13
(0.245 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
1.27 ± 0.13
(0.05 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
4.32 ± 0.13
(0.170 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
0.23
(0.009)
rad.
A =
PAD 1 - Collector 1
PAD 2 - Base 1
PAD 3 - Base 2
PAD 4 - Collector 2
PAD 5 - Emitter 2
PAD 6 - Emitter 1
200°C
–65 to 200°C
PER SIDE TOTAL
Prelim. 2/00
LAB
SEME
2N3209DCSM
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
t
on
Turn-on Time
t
off
Turn-off Time
VCC= 2V IC= 30mA IB1= 1.5mA
VCC= 2V IC= 30mA
I
B1
= IB2= 1.5mA
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
I
C
= 10mA
IC= 10mA
IE= 10mAIC= 0
VCE= 10V VBE= 0
VCE= 10V VBE= 0
TC= 125°C
IC= 10mA IB= 1mA
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
IC= 10mA IB= 1mA
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
IC= 10mA VCE= 0.3V
IC= 30mA VCE= 0.5V
IC= 100mA VCE= 1V
IC= 30mA VCE= 0.5V
V
CEO(sus)*
Collector – Emitter Sustaining Voltage
V
(BR)CBO*
Collector – Base Breakdown Voltage
V
(BR)EBO*
Emitter – Base Breakdown Voltage
I
CES*
Collector Cut-off Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
T
amb
= –55°C
-20
-20
-4
80
10
0.15
0.20
0.60
0.78 0.98
0.85 1.2
1.7
25
30 120
15
12
V
V
V
nA
m
A
V
V
—
f
T
Transition Frequency
C
EBO
Capacitance
C
CBO
Input Capacitance
IC= 30mA VCE= 10V f = 100MHz
V
EB
= 0.5V IC= 0 f = 1.0MHz
V
CB
= 5V IE= 0 f = 1.0MHz
400
6.0
5.0
MHz
pF
pF
60
90
ns
ns
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
* Pulse test tp = 300ms ,
d £
2%
DYNAMIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
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