Seme 2N3209CSM Datasheet
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/93
LAB
SEME
2N3209CSM
HIGH SPEED, PNP,
SWITCHING TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL PNP TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
For high reliablitity general purpose
applications requiring small size and low
weight devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50°C
R
ja
Thermal Resistance Junction to Ambient
T
j
Max Junction Temperature
T
stg
Storage Temperature
–20V
–20V
–4V
–200mA
300mW
2.20mW / °C
420°C / W
200°C
–55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC (CSM)
LCC1 PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
Underside View
PAD 1 Base
PAD 2 Emitter
PAD 3 Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/93
LAB
SEME
2N3209CSM
Parameter Test Conditions Min. Typ. Max. Unit
t
on
Turn-on Time
t
off
Turn-off Time
VCC= 2V IC= 30mA IB1= 1.5mA
VCC= 2V IC= 30mA
IB1= IB2= 1.5mA
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
IC= 10mA
IC= 10µA
IE= 10µA IC= 0
VCE= 10V VBE= 0
VCE= 10V VBE= 0
TC= 125°C
IC= 10mA IB= 1mA
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
IC= 10mA IB= 1mA
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
IC= 10mA VCE= 0.3V
IC= 30mA VCE= 0.5V
IC= 100mA VCE= 1V
IC= 30mA VCE= 0.5V
V
CEO(sus)*
Collector – Emitter Sustaining Voltage
V
(BR)CBO*
Collector – Base Breakdown Voltage
V
(BR)EBO*
Emitter – Base Breakdown Voltage
I
CES*
Collector Cut-off Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
T
amb
= –55°C
-20
-20
-4
80
10
0.15
0.20
0.60
0.78 0.98
0.85 1.2
1.7
25
30 120
15
12
V
V
V
nA
µA
V
V
—
f
T
Transition Frequency
C
EBO
Capacitance
C
CBO
Input Capacitance
IC= 30mA VCE= 10V f = 100MHz
VEB= 0.5V IC= 0 f = 1.0MHz
VCB= 5V IE= 0 f = 1.0MHz
400
6.0
5.0
MHz
pF
pF
60
90
ns
ns
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
* Pulse test tp = 300µs , δ ≤ 2%
DYNAMIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
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