Seme 2N3053 Datasheet

Prelim.01/01

2N3053

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

MEDIUM PO WER SILICON

NPN PLANAR TRANSISTOR

FEATURES

• V

CEO =

40V

• I

C

= 0.7A

• P

tot

= 5W

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage

V

CER

Collector – Emitter Sustaining Voltage

V

CEX

Collector - Emiiter Voltage

V

EBO

Emitter-Base Voltage

I

C

Collector Current

P

TOT

Power Dissipation T

amb

= 25°C

T

case

= 25°C

T

j

Junction Temperature

T

stg

Storage Temperature

R

th(jc)

Thermal Resistance Junction to Case

R

th(ja)

Thermal Resistance Junction to Ambient

60V
40V
50V
60V

5V

0.7A
1W
5W

200°C

–65 to 200°C

35°C / W

175°C / W

MECHANICAL DATA

Dimensions in mm (inches)

TO39 PACKAGE

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

Pin 1 = Emitter

Underside View

Pin 2 = Base Pin 3 = Collector

0.89

(0.035)

max.

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

2.54

(0.100)

5.08 (0.200)
typ.

45˚

12.70

(0.500)

min.

4.19 (0.165)

4.95 (0.195)

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

7.75 (0.305)

8.51 (0.335)
dia.

123

Prelim.01/01

2N3053

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

I

C

= 100mA IB= 0

R

BE

= 10

W

IC= 100mA
IC= 0.1mA IE= 0
IE= 0.1mA IC= 0
VCB= 30V IE= 0
VEB= 4V IC= 0
IC= 0.15A IB= 0.015A
IC= 0.15A IB= 0.015A
IC= 0.15A VCE= 10V
VCE= 10V IC= 0.05A
f = 100MHz
VCB= 10V f =1MHz
VEB= 10V f =1MHz

V

CEO(SUS)

Collector – Emitter Voltage

V

CER(SUS)*

Collector – Emitter Voltage

V

(BR)CBO*

Collector – Base Breakdown Voltage

V

(BR)EBO*

Emitter – Base Breakdown Voltage

I

CBO

Collector – Base Cut-off Current

I

EBO

Emitter - Base Cut-off Current

V

CE(sat)*

Collector – Emitter Saturation Voltage

V

BE(sat)*

Base – Emitter Saturation Voltage

h

21E*

Static Forward Current Transfer ratio

f

T

Transistion Frequency

C

22b

Output Capacitance

C

11b

Input Capacitance

40
50
60

5

0.25

0.25

1.4

1.7

50 250

100

15
80

V

m

A

V

—

MHz

pF

*

Pulsed tp = 300mS

d £

2 %